High-voltage superjunction dmos structure integrating starting tube, sampling tube and resistor and its preparation method
A technology of sampling tubes and start-up tubes, applied in circuits, electrical components, electric solid devices, etc., can solve the problems of large overall circuit area, low circuit conversion efficiency, high standby loss, etc., achieve chip area reduction, reduce standby power consumption, The effect of reducing chip cost
Active Publication Date: 2021-08-17
NANJING HRM SEMICON CO LTD
View PDF4 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
[0002] figure 1 It is the floor plan of ordinary DMOS products. There is no start-up tube, sampling tube and resistor structure in the structure of ordinary DMOS products. In practical applications, discrete current sampling resistors and DMOS tubes are needed to realize sampling and asynchronous start-up, and the circuit conversion efficiency is low. The overall area of the circuit is large, and the standby loss is high
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0042] The technical solutions of the present invention will be described in detail below in conjunction with the accompanying drawings.
[0043] The present invention designs a high-voltage super-junction DMOS structure integrating a startup transistor, a sampling transistor and a resistor, including a main MOS transistor, a startup MOS transistor, a sampling MOS transistor and a polycrystalline resistor, such as figure 2 As shown, the drains of the main MOS transistor, the starting MOS transistor and the sampling MOS transistor are connected together, the gate of the sampling MOS transistor is connected to the gate of the main MOS transistor, and the gate of the starting MOS transistor is connected to the polycrystalline resistor through the polycrystalline resistor. Start the drain connection of the MOS transistor.
[0044] Each MOS tube forms a super junction structure by alternately arranging N columns and P columns. An isolation structure is arranged between two adjace...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
| Property | Measurement | Unit |
|---|---|---|
| electrical resistivity | aaaaa | aaaaa |
| electrical resistivity | aaaaa | aaaaa |
| thickness | aaaaa | aaaaa |
Login to View More
Abstract
The invention discloses a high-voltage super-junction DMOS structure integrating a starting tube, a sampling tube and a resistor. The drains of the main MOS tube, the starting MOS tube and the sampling MOS tube are connected together, the gate of the sampling MOS tube is connected to the gate of the main MOS tube, and the gate of the starting MOS tube is connected to the drain of the starting MOS tube through a polycrystalline resistor ; Each MOS transistor is alternately arranged with N columns and P columns to form a super junction structure; an isolation structure is set between two adjacent MOS transistors, and in each isolation area, the tops of the P columns are connected together by Ring injection, thereby forming pressure ring. The invention improves the integration degree of the circuit, reduces the starting loss and the current sampling loss in the circuit, thereby reducing the standby power consumption and improving the energy conversion efficiency.
Description
technical field [0001] The invention belongs to the field of semiconductor devices, and in particular relates to a DMOS structure and a preparation method thereof. Background technique [0002] figure 1 It is the floor plan of ordinary DMOS products. There is no start-up tube, sampling tube and resistor structure in the structure of ordinary DMOS products. In practical applications, discrete current sampling resistors and DMOS tubes are needed to realize sampling and asynchronous start-up, and the circuit conversion efficiency is low. The overall area of the circuit is larger, and the standby loss is higher. Contents of the invention [0003] In order to solve the technical problems mentioned above in the background technology, the present invention proposes a high-voltage super-junction DMOS structure integrating a starting tube, a sampling tube and a resistor and a preparation method thereof. [0004] In order to realize above-mentioned technical purpose, technical s...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/78H01L29/06H01L27/02H01L21/336
CPCH01L27/0203H01L29/0634H01L29/0684H01L29/66674H01L29/7801H01L2224/0603
Inventor 李加洋胡兴正陈虞平刘海波
Owner NANJING HRM SEMICON CO LTD