Double-channel uniform electric field modulation transverse double-diffusion metal oxide wide-band-gap semiconductor field effect transistor and manufacturing method thereof

Abstract

The invention provides a double-channel uniform electric field modulation transverse double-diffusion metal oxide wide-band-gap semiconductor field effect transistor and a manufacturing method thereof. The field effect transistor is mainly characterized in that the LDMOS device based on triple (Triple) surface electric field reduction (RESURF) forms a double-gate structure at a base region of thedevice through a planar gate process and a trench gate process; according to the technical scheme of the invention, the two conductive channels are adopted to achieve the effect of the two conductivechannels, so that the specific on-resistance (RON, sp) of the device is effectively reduced. And a semi-insulating polycrystalline silicon layer (SIPOS) structure is formed above the drift region of the device by adopting a low-pressure chemical vapor deposition (LPCVD) process, so that the breakdown voltage of the device can be effectively improved, and the on resistance of the device can be reduced.

Description

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AI Technical Summary

Benefits of technology

This technology describes how two gates or structures called transistor gates and Schottky barriers help reduce electrical current flowing along certain paths within devices like triplex RESureus diodes. By forming these features with different processes during manufacturing, they improve their ability to control both conduction currents and create more effective power distribution systems for electronic components such as integrated circuits.

Problems solved by technology

The technical problem addressed for this patented solution relates to improving the efficiency at charging electronic components such as trivalence gallium nitride (GaN), particularly when combined into vertically integrated circuits or Power Electronic Devices (PECD)). This requires improved design techniques to ensure proper electrical behavior during operation without compromising their effectiveness due to charges distributed unevenly across different regions within the component's structure.

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