Satellite internal medium deep charging monitoring method

A deep charging, satellite technology, applied in the direction of testing dielectric strength, measuring electricity, measuring devices, etc., can solve problems such as the inability to effectively evaluate the bad situation of the internal medium charging of the satellite, and the inability to track and calculate the continuous changes of the charging phone, so as to ensure safe operation. Effect

Active Publication Date: 2020-08-07
NAT SATELLITE METEOROLOGICAL CENT +1
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Problems solved by technology

[0007] The evaluation of the deep charging of the satellite's internal medium in the prior art is usually unable to effectively evaluate the harsh

Method used

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  • Satellite internal medium deep charging monitoring method

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Embodiment 1

[0055] This embodiment provides a method for monitoring deep-layer charging of satellite internal media. figure 1 , the method includes the following steps:

[0056] First, divide the energy spectrum of the high-energy electrons incident into the interior of the satellite, and obtain the energy E of the high-energy electrons in each energy channel;

[0057] In a preferred embodiment of this embodiment, the energy spectrum of the high-energy electrons is divided according to the different energy channels of the satellite high-energy electron detectors, such as figure 1 As shown, according to the detection energy division of satellite high-energy electron detectors, the energy spectrum of high-energy electrons is divided into energy channel 1, energy channel 2, ... and energy channel n. By setting energy channels, high-energy electrons with different energies can be given The flux of electrons, the combination of multiple energy channels can give the energy spectrum of high-ene...

Embodiment 2

[0086] This embodiment also provides a method for monitoring the deep charging of the satellite's internal medium, such as image 3 As shown, the method of this embodiment first adopts the same method as the method of Embodiment 1, and obtains the total electron flux F incident on the satellite internal medium at the first observation moment according to formulas (1) to formulas (5) 1 , given the initial charging voltage U of the satellite’s internal medium 1 =U 0 . A large number of experiments have proved that after a certain period of time, the actual charging voltage is only related to the incident electron flux, so the initial voltage can be within a reasonable range.

[0087] The charging of high-energy electrons in the medium mainly includes the voltage formed by the deposition of high-energy electrons. At the same time, because the resistivity of the medium is not infinite, the current caused by the weak electric field formed in the medium causes the loss of charges....

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Abstract

The invention provides a satellite internal medium deep charging monitoring method which comprises the following steps: performing energy spectrum division on high-energy electrons incident to a satellite internal medium to obtain the energy Ei of the high-energy electrons of each energy channel; calculating the electron flux transmittance rat of each energy channel passing through the satellite protection layer; obtaining the electron flux Fi of each energy channel incident to the surface of the internal medium of the satellite, and further obtaining the total electron flux F of each energy channel incident to the surface of the internal medium of the satellite; calculating the deep charging voltage U of the satellite internal medium according to the total electron flux F, wherein U=S*F*Qe*R, S is the detection area of the deep charging medium, and R is the resistance Qe of the deep charging medium and is the charge of a single electron. According to the deep charging voltage, the material of the internal medium of the satellite can be screened or the shielding measure can be optimized in a targeted manner, so that the single-machine operation is further optimized. The method provided by the invention can also realize continuous monitoring of the charging voltage of the internal medium of the satellite, and has very strong practicability.

Description

technical field [0001] The invention relates to the technical field of satellite internal dielectric charging, in particular to a method for monitoring deep charging of satellite internal dielectrics. Background technique [0002] The process of space high-energy electrons passing through the satellite surface, transporting and depositing inside the dielectric material of satellite components to establish an electric field is called internal dielectric charging, which is the main cause of geosynchronous orbit satellite failures and abnormalities, mainly caused by radiation belts outside the earth. Caused by high-energy electrons, these high-energy electrons have high energy and strong penetrating ability. They can penetrate the protective layer of the satellite surface and enter the dielectric of the satellite components, thereby generating a charging effect. The intermediate process of interaction between electrons and dielectric materials is complex, the main way is Coulom...

Claims

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Application Information

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IPC IPC(8): G01R31/12G01R19/00
CPCG01R31/1272G01R19/0084
Inventor 薛炳森李黎鲁礼文田曼白玉李禹周率
Owner NAT SATELLITE METEOROLOGICAL CENT
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