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Method for reinforcing single event effect resistance of germanium-silicon heterojunction transistor

A heterojunction transistor, anti-single event effect technology, applied in the field of microelectronics, can solve problems such as increased manufacturing cost, achieve the effect of improving evaluation time and reducing the cost of radiation hardening

Pending Publication Date: 2020-08-07
XIDIAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

It can be seen that the current anti-radiation hardening schemes all need to change the original structure or process preparation method of the transistor, which means that in order to realize the anti-radiation hardening capability of the transistor, it is necessary to re-manufacture the transistor, resulting in a substantial increase in manufacturing costs

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  • Method for reinforcing single event effect resistance of germanium-silicon heterojunction transistor
  • Method for reinforcing single event effect resistance of germanium-silicon heterojunction transistor
  • Method for reinforcing single event effect resistance of germanium-silicon heterojunction transistor

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Embodiment 1

[0025] figure 1 The flow chart of a method for strengthening the germanium-silicon heterojunction transistor against the single event effect provided by Embodiment 1 of the present invention, refer to figure 1 , the reinforcement method for germanium-silicon heterojunction transistor anti-single event effect comprises the following steps:

[0026] S101. Select a silicon-germanium heterojunction transistor that meets preset electrical characteristics from a plurality of silicon-germanium heterojunction transistors as a primary silicon-germanium heterojunction transistor.

[0027] In this step, a plurality of silicon-germanium heterojunction transistors are screened according to preset electrical characteristics, so as to ensure that the silicon-germanium heterojunction transistors tested are transistors with excellent electrical performance rather than transistors with poor electrical performance, thereby ensuring Validity of the test. The primary silicon-germanium heterojunc...

Embodiment 2

[0058] On the basis of the foregoing embodiments, the embodiment of the present invention divides a plurality of silicon-germanium heterojunction transistors into a plurality of groups, so as to test a plurality of silicon-germanium heterojunction transistors at the same time, and improve efficiency. figure 2 For the flow chart of a method for strengthening the silicon-germanium heterojunction transistor against the single event effect provided by Embodiment 2 of the present invention, refer to figure 2 , the reinforcement method for germanium-silicon heterojunction transistor anti-single event effect comprises the following steps:

[0059] S201. Select n×(2m+1) germanium-silicon heterojunction transistors of the same process line and the same batch, and perform forward Gummel input characteristics and reverse for these n×(2m+1) germanium-silicon heterojunction transistors. The electrical characteristic test of Gummel input characteristics eliminates silicon-germanium hetero...

Embodiment 3

[0081] On the basis of the above-mentioned embodiments, the embodiment of the present invention divides a plurality of silicon-germanium heterojunction transistors into a plurality of groups, and takes m=2, n=4 as an example for further illustration.

[0082] Step 1, screening silicon germanium heterojunction transistor (SiGe HBT) devices as gamma ray pre-irradiated samples:

[0083] 1a) From the same batch of products produced by the same process line, 20 SiGe HBTs were taken as experimental samples. The forward Gummel input characteristics and reverse Gummel input characteristics of germanium-silicon heterojunction transistors were selected as screening conditions, and the above two electrical characteristics tests were carried out on 20 samples using a semiconductor parameter tester.

[0084] 1b) Among them, the test of the forward Gummel input characteristics requires the base-emitter junction voltage (VBE) as the drive, gradually increasing from 0V to 1.5V, and testing th...

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Abstract

The invention provides a method for reinforcing the single event effect resistance of a germanium-silicon heterojunction transistor. The method comprises the following steps: screening out a germanium-silicon heterojunction transistor conforming to preset electrical characteristics from a plurality of germanium-silicon heterojunction transistors as a primarily selected germanium-silicon heterojunction transistor; carrying out gamma ray pre-irradiation on the primarily selected germanium-silicon heterojunction transistor under a preset bias voltage to obtain reinforced germanium-silicon heterojunction transistors; screening out a reinforced germanium-silicon heterojunction transistor conforming to preset electrical characteristics from the plurality of reinforced germanium-silicon heterojunction transistors to serve as a single event effect resistant germanium-silicon heterojunction transistor; and according to the single-particle transient signal difference of the primarily selected germanium-silicon heterojunction transistor and the single event effect resistant germanium-silicon heterojunction crystal under the conditions of the same laser pulse energy and the same bias voltage,obtaining the optimal laser pulse energy and the optimal bias voltage. According to the invention, the single event effect resistance of the transistor is improved at a low cost without changing the process and the device structure.

Description

technical field [0001] The invention relates to microelectronics technology, in particular to a reinforcement method for germanium-silicon heterojunction transistor against single event effect. Background technique [0002] With the development of microwave and millimeter wave technology, higher requirements are put forward for the frequency characteristics, extreme environment working stability and radiation resistance reliability of spaceborne electronic equipment. Improving the payload of spacecraft, expanding remote control capabilities, improving communication efficiency, and reducing system power consumption and cost have become urgent problems and key development directions for current and future space missions. [0003] SiGe HBT uses energy band engineering to effectively improve the frequency characteristics and amplification characteristics of bipolar transistors, and make it able to withstand extreme temperatures from -180°C to +200°C, especially in low temperatur...

Claims

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Application Information

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IPC IPC(8): H01L23/556H01L29/737
CPCH01L23/556H01L29/737
Inventor 张晋新郭红霞付军王玉东欧阳晓平潘霄宇王信孙静
Owner XIDIAN UNIV