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Method for preparing overlay marks by electron beam lithography based on hsq

A technology of electron beam lithography and overlay marking, which is applied in the field of optoelectronics, can solve the problems of high cost and pollution of the wafer surface, etc., and achieve the effects of improving yield, reducing pollution and saving costs

Active Publication Date: 2022-07-29
天津华慧芯科技集团有限公司
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  • Abstract
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  • Application Information

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Problems solved by technology

The cost is high, and the residual metal may contaminate the wafer surface during stripping

Method used

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  • Method for preparing overlay marks by electron beam lithography based on hsq

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Embodiment Construction

[0023] In order to further understand the content of the invention, features and effects of the present invention, the following embodiments are exemplified and described in detail with the accompanying drawings as follows:

[0024] A method for preparing overlay marks based on HSQ electron beam lithography, comprising:

[0025] S1. In order to make HSQ have strong adhesion on the substrate, the wafer source can be dehydrated and baked to increase the adhesion of the substrate.

[0026] S2. In order to enhance the stability and strength of the photoresist after spin-coating the photoresist; a pre-baking treatment should be performed,

[0027] The experiment found that because the HSQ photoresist is sensitive to temperature, the temperature accuracy of the baking equipment should be within ±1℃.

[0028] S3. Using the high sensitivity of HSQ as a negative photoresist, it is converted into a silicon oxide-like characteristic after being irradiated by an electron beam.

[0029] ...

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Abstract

The invention discloses a method for preparing overlay marks by electron beam lithography based on HSQ, which belongs to the technical field of optoelectronics. Pre-bake after applying HSQ photoresist; S3, electron beam exposure; use the characteristics of HSQ as a negative photoresist, draw the mark exposure layout, and use less time exposure to complete the direct writing and post-development of the drawn layout; S4 , high temperature hard film baking; S5, spin coating the photoresist required for the subsequent process according to the requirements, carry out the layout overlay of the subsequent process layout according to the coordinate system established by the step S3mark exposure layout; develop the top photoresist; carry out subsequent evaporation Plating or etching process, and remove the top photoresist; S6, use HF to add deionized water or ammonia water: hydrogen peroxide: deionized water solution to remove HSQ mark.

Description

technical field [0001] The invention belongs to the technical field of optoelectronics, and in particular relates to a method for preparing overlay marks based on HSQ electron beam lithography. Background technique [0002] As we all know, HSQ (trade name) is an inorganic photoresist, and its main component is hydrogen silsesquioxane (a SiO2-like component) that is liquid at room temperature. After spin coating and baking, the polymer will decompose, the organic components will volatilize, and the rest is the SiO2 component. The irradiation of electron beam can make HSQ show the physical properties of SiO2. [0003] After more than 20 years of rapid development, lithography plays a pivotal role in semiconductor technology. The research and development of lithography process has become particularly important. The cutting-edge 100nm UV lithography machine is extremely expensive and limited by the limitations of mask preparation. The cost of developing and manufacturing new...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/027H01L23/544G03F7/20G03F9/00
CPCH01L21/0274H01L23/544G03F7/2059G03F9/7073
Inventor 曲迪王文龙王磊白国人陈帅隋春雨
Owner 天津华慧芯科技集团有限公司