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Memory and forming method thereof

A technology of memory and extension direction, which is applied in the manufacturing of electric solid-state devices, semiconductor devices, semiconductor/solid-state devices, etc., can solve problems such as cumbersomeness and affect production efficiency, and achieve the effects of simple preparation process, improved production efficiency, and reduced contact resistance.

Inactive Publication Date: 2020-08-25
FUJIAN JINHUA INTEGRATED CIRCUIT CO LTD
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  • Abstract
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  • Claims
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Problems solved by technology

[0004] However, in the existing process, the process steps of forming contact plugs by filling contact windows are relatively cumbersome, which affects production efficiency

Method used

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  • Memory and forming method thereof
  • Memory and forming method thereof
  • Memory and forming method thereof

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Embodiment Construction

[0063] The memory and its forming method proposed by the present invention will be further described in detail below with reference to the drawings and specific embodiments. The advantages and features of the present invention will become clearer from the following description. It should be noted that all the drawings are in a very simplified form and use imprecise scales, and are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention.

[0064] Figure 1a It is a top view of the memory in an embodiment of the present invention when it mainly shows the bit line, Figure 1b for Figure 1a A schematic cross-sectional view of a storage device in an implementation of the present invention along the directions aa' and bb', Figure 2a It is a top view of the memory in an embodiment of the present invention when it mainly shows bit lines and contact plugs, Figure 2b for Figure 2a Shown is a schematic cross-sectional view of...

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Abstract

The invention provides a memory and a forming method thereof. A groove extending along a first direction is defined by utilizing adjacent bit lines, the bottom of the groove is integrally recessed into a substrate to form a lower groove, a plurality of contact plugs are sequentially arranged in the groove, and an isolation column is arranged between the adjacent contact plugs to separate the adjacent contact plugs. Due to the fact that the lower groove is integrally sunken into the substrate, the lower groove can be formed by directly etching the substrate with a bit line as a mask, the forming method is simple, the contact plugs can be formed preferentially, then the adjacent contact plugs are separated through the isolation columns, the process steps are few, and the production efficiency of a device can be improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a memory and a forming method thereof. Background technique [0002] Memory, such as dynamic random access memory (Dynamic Random Access Memory, DRAM), which generally includes a storage capacitor and a storage transistor electrically connected to the storage capacitor, the storage capacitor is used to store charges representing stored information, and the storage transistor The storage capacitor can be electrically connected through a contact plug. [0003] Wherein, the method for forming the contact plug generally includes: defining a contact window by using a bit line and an isolation line, and then filling the contact window with a conductive material to form the contact plug. Wherein, the method for forming the isolation line includes: preferentially forming a sacrificial layer with a trench, then filling the trench with an isolation material to form the isolation li...

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Application Information

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IPC IPC(8): H01L27/108H01L21/8242
CPCH10B12/30H10B12/02
Inventor 张钦福林昭维朱家仪朴成童宇诚
Owner FUJIAN JINHUA INTEGRATED CIRCUIT CO LTD
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