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Preparation method of crystalline silicon solar passivation contact cell

A solar and battery technology, applied in the field of solar cells, can solve problems such as failure of solar cells

Inactive Publication Date: 2020-08-28
TONGWEI SOLAR ENERGY MEISHAN CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, in the practice of existing passivated contact technology, solar cells are prone to failure

Method used

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  • Preparation method of crystalline silicon solar passivation contact cell
  • Preparation method of crystalline silicon solar passivation contact cell
  • Preparation method of crystalline silicon solar passivation contact cell

Examples

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Embodiment Construction

[0024] Embodiments of the present application will be described in detail below in conjunction with examples, but those skilled in the art will understand that the following examples are only used to illustrate the present application, and should not be considered as limiting the scope of the present application. Those who do not indicate the specific conditions in the examples are carried out according to the conventional conditions or the conditions suggested by the manufacturer. The reagents or instruments used were not indicated by the manufacturer, and they were all conventional products that could be purchased from the market.

[0025] The following is a specific description of the preparation method of the crystalline silicon solar passivation contact cell according to the embodiment of the present application:

[0026] Crystalline silicon solar passivation contact cell is a solar cell using silicon material, based on PN junction, combined with passivation contact techn...

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Abstract

The invention discloses a preparation method of a crystalline silicon solar passivation contact cell, and belongs to the field of solar cells. The preparation method comprises the steps of manufacturing a tunneling layer on the back surface of N-type crystalline silicon to obtain a first structure body; manufacturing an n+ doped polycrystalline silicon passivation layer on the back surface of thetunneling layer, and then performing edge and front surface etching to obtain a second structure body; performing p+ doping on the front surface of the second structure body to manufacture a P-type layer, and then performing edge and back surface etching to obtain a third structure body; manufacturing a passivation film on the front surface of the third structure body to obtain a fourth structurebody; manufacturing anti-reflection films on the front surface and the back surface of the fourth structure body correspondingly to obtain a fifth structure body; and respectively manufacturing electrodes on the front surface and the back surface of the fifth structure body. The cell is simple in manufacturing process and high in photoelectric efficiency.

Description

technical field [0001] The present application relates to the field of solar cells, in particular, to a method for preparing a crystalline silicon solar passivation contact cell. Background technique [0002] In recent years, as a green and environmentally friendly energy technology, crystalline silicon solar power generation has developed rapidly, and various new crystalline silicon technologies have emerged in an endless stream. [0003] Currently, passivated emitter and rear cells (PERC for short) are the main products on the market. The photoelectric conversion efficiency of mainstream mass-produced PERC solar cells can exceed 22%. However, the improvement of the conversion efficiency of PERC solar cells will be more limited. Therefore, a technique called passivation contact was developed, which can be used to further improve the photoelectric conversion efficiency of the cell. The passivation contact technology has strong compatibility with the existing PERC technolo...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18
CPCH01L31/1804H01L31/186H01L31/1868Y02E10/547Y02P70/50
Inventor 常青谢毅张忠文王永谦
Owner TONGWEI SOLAR ENERGY MEISHAN CO LTD
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