104results about How to "Avoid plating" patented technology

Microneedle arrays are fabricated by providing a sacrificial mold including a substrate and an array of posts, preferably solid posts, projecting therefrom. A first material is coated on the sacrificial mold including on the substrate and on the array of posts. The sacrificial mold is removed to provide an array of hollow tubes projecting from a base. The inner and outer surfaces of the array of hollow tubes are coated with a second material to create the array of microneedles projecting from the base. The sacrificial mold may be fabricated by fabricating a master mold, including an array of channels that extend into the master mold from a face thereof. A third material is molded into the channels and on the face of the master mold, to create the sacrificial mold. The sacrificial mold then is separated from the master mold. Alternatively, wire bonding may be used to wire bond an array of wires to a substrate to create the sacrificial mold. The first material preferably is coated on the sacrificial mold by plating. Prior to plating, a plating base preferably is formed on the sacrificial mold including on the substrate and on the array of posts. The inner and outer surfaces of the array of hollow tubes preferably are coated with the second material by overplating the second material on the inner and outer surfaces of the array of hollow tubes.

A hot-dip galvanized steel sheet composed of a basis steel sheet containing Si in an amount of 0.05-2.5 mass % and Mn in an amount of 0.2-3 mass % and a hot-dip galvanized zinc layer formed on the surface thereof, wherein said hot-dip galvanized zinc layer is formed in such a way that there is an Si-Mn enriched phase which is found, by observation under a scanning electron microscope or a transmission electron microscope, in the vicinity of the interface in a region no shorter than 50 mum in the cross section perpendicular to the interface between the basis steel sheet and the hot-dip galvanized zinc layer, said Si-Mn enriched phase containing more than twice as much Si and/or Mn as the basis steel sheet and extending over a length no more than 80% of the length of the interface observed. This hot-dip galvanized steel sheet is free of bare spots even in the case where the basis steel sheet contains Si and Mn in a comparatively large amount and hence is liable to suffering bare spots.

A method of manufacturing a semiconductor device is disclosed in which a metallic deposit is stably formed on the anode side with small variation in film thickness, and plating is prevented on the cathode side without carrying out any additional processing on the cathode side. The processed anode side causes no interference in subsequent processing. Insulator films are used to cover a scribe line, as well as a field plate or an open electrode provided on a surface of a silicon substrate before Ni electroless plating of an aluminum electrode is performed to form a metallic deposit on the electrode.

The invention discloses a method for pre-lithiation of a cathode pole piece of a lithium ion battery. The method comprises the step of forming an external short-circuited circuit between the anode and the cathode of a button battery. According to the invention, a solid polymer electrolyte film is formed on a cathode surface in advance in the manner of pre-lithiation, so that the lithium ion consumed in the process of firstly charging the whole battery can be avoided and the first coulombic efficiency of the battery is increased.

The invention provides a method for performing chemical nickel plating on the surface of a capacitive touch screen. The method comprises the step that an ITO thin film is sequentially subjected to ungrease treatment, corrosion treatment, activation treatment, reduction treatment and chemical nickel plating; an activating agent used in the activation treatment step is prepared according to the following steps: PdC12, deionized water and concentrated hydrochloric acid are mixed and heated at the temperature of 50 DEG C to obtain H2PdC14 solutions; diethylenetriamine is added into the H2PdC14 solutions to keep for 4 hours at the temperature of 50 DEG C; solvents are evaporated and removed to obtain a palladium compound; the palladium compound is dissolved into N-methyl pyrrolidone to obtain NMP solutions of the palladium compound; the NMP solutions are mixed with diethylene glycol monoethyl ether and diglycidyl ether to obtain activating agents. Compared with the prior art, the activating agents prepared by using the method are used for activating, thereby avoiding the plating of conductive substances on the part with no need of nickel plating between the electrodes in a chemical nickel plating step, and a good nickel plating effect is guaranteed.

A method and resulting formed device are disclosed wherein the method combines polysilicon surface-micromachining with metal electroplating technology to achieve a capacitively-driven, lateral micromechanical resonator with submicron electrode-to-resonator capacitor gaps. Briefly, surface-micromachining is used to achieve the structural material for a resonator, while conformal metal-plating is used to implement capacitive transducer electrodes. This technology makes possible a variety of new resonator configurations, including disk resonators and lateral clamped-clamped and free-free flexural resonators, all with significant frequency and Q advantages over vertical resonators. In addition, this technology introduces metal electrodes, which greatly reduces the series resistance in electrode interconnects, thus, minimizing Q-loading effects while increasing the power handling ability of micromechanical resonators.

The invention discloses a wafer-level fan-out type stack package process method, and the method comprises the following steps: pasting a dry photoresistive membrane on a high-temperature bonding glue layer on a light-transmitting temporary substrate; forming a plurality of blind holes, which are directly communicated with the high-temperature bonding glue layer, on the dry photoresistive membrane; implanting conductive metal poles in the blind holes after the dry photoresistive membrane is solidified; pasting an unpacked chip on the surface of the dry photoresistive membrane; carrying out the integrated injection moulding, and carrying out the grinding of the surface of a plastic packaged body till the bonding pad of the unpacked chip is completely exposed; manufacturing a rewiring layer, used for connecting the conductive metal poles and the unpacked chip, on the grinding surface of the plastic packaged body, wherein the rewiring layer is provided with miniature salient points obtained through reballing and reflow soldering; removing the light-transmitting temporary substrate and the high-temperature bonding glue layer, and obtaining a package unit; and obtaining a fan-out stacked package structure according to the package unit. The method simplifies the manufacturing technology of a fan-out type stack package, and reduces the manufacturing cost of the stack package.

The invention provides a PCB manufacturing method and a PCB. The method comprises steps that, a substrate is drilled to form a plugging hole; a first copper layer is plated on a surface of the substrate, and copper plating on an inner wall of the plugging hole is carried out; the plugging hole is filled by employing resin till the resin projects out of the plugging hole port; material decrease processing on the resin projected out of the port is carried out to make the resin project out of the surface of the port and be level with the surface of the first copper layer; the substrate is drilled to form a non-plugging hole; a second copper layer is plated on the first copper layer, and copper plating on the inner wall of the non-plugging hole is carried out; a substrate graph is shifted; the substrate is etched to form a conductive line. The PCB is manufactured through the PCB manufacturing method, the non-plugging hole quite near the plugging hole is quite clean internally, when on-off tests on the PCB are carried out, after the non-plugging hole is detected by a probe, the probe can tightly contact with the conductive copper layer of the hole wall of the non-plugging hole to realize conduction, and thereby efficiency for determining functions of the PCB can be greatly improved.

The invention discloses a golden finger plate processing technology. A primary dry film is provided at the position of a golden finger graph, an acidic CuCl2 etching solution is utilized to etch the position for golden finger plating, a problem of diffusion plating on leads caused by incomplete dry film coverage for lines on a same plane and gaps among the lines because of inaccurate alignment during anti-plating dry film operation can be prevented, non-plating areas except a PCB plate golden finger graph area is provided with secondary dry films, plating of a nickel layer and a gold layer is sequentially carried out at an etched golden finger graph area, after dry film removal, no lead residual on golden fingers is realized, a problem of short circuit at the golden finger position because of diffusion plating can be effectively avoided, and quality of products is improved.

The invention provides a graphite boat pretreatment substitution piece and a graphite boat pretreatment method. In the prior art, a graphite boat is pretreated through no-load pretreatment or silicon chip fully-loaded pretreatment, which causes relatively-high cost or bad pretreatment effect. The shape of the graphite boat pretreatment substitution piece is matched with process clamping points; the marginal area thickness range of the substitution piece is 100-300 mum, and the central area thickness range of the substitution piece is 1-3 mm; and thus the substitution piece can be reused many times. The graphite boat pretreatment method is characterized by, to begin with, providing a graphite boat for pretreatment, the graphite boat being provided with a plurality of process clamping points; next, providing a graphite boat pretreatment substitution piece, the number of which is matched with that of the graphite boat; then, arranging the graphite boat pretreatment substitution piece on the process clamping points of the graphite boat; and at last, arranging the graphite boat to chemical vapor deposition equipment to deposit silicon nitride. Therefore, the cost of pretreatment can be reduced, and the performance of the pretreatment is improved.

A press-fit terminal includes an electric connecting part provided in a front part of the press-fit terminal to be electrically connected to a mating connector terminal; a rear leg part provided in a rear part of the press-fit terminal to be inserted and fixed to a through hole of a circuit board; and an engaging part provided in an intermediate part between the electric connecting part and the rear leg part to be press-fitted to a press-fit hole of a wall part of a connector housing. The rear leg part is formed in a shape of a round pin having a circular form in cross-section. The rear leg part may be designed to have a diameter in cross-section being smaller than a minimum dimension between opposed inner wall surfaces of the press-fit hole of the connector housing.

An in situ ultra-low power contactless measurement apparatus and method suitable for micro-electronics in big data applications for continuously reporting a soil moisture profile at various zones.

The invention discloses an environment-friendly high-phosphorus chemical nickel plating solution for an airtight glass-sealed binding terminal. The environment-friendly high-phosphorus chemical nickel plating solution comprises the following active ingredients according to concentration: 25-27g/L nickel sulfate, 19-22g/L sodium hypophosphite, 20-23g/L sodium hydroxide, 41-44g/L lactic acid, 1.5-2.3g/L trisodium citrate, 13-15g/L malic acid, 8-12g/L glycine, 0.2-0.4ml/L OP-10, 0.26-0.3g/L stannous chloride, 0.26-0.34g/L maleic anhydride and 3-5mg/L N,N-diethylaminopropyne. The invention discloses a method for performing chemical plating by adopting the chemical nickel plating solution. A stainless steel needle and an iron cover can be simultaneously subjected to chemical nickel plating and be evenly plated, no nickel nuclear generated on sintered glass can be guaranteed, and the difficulty in keeping the smoothness and cleanness of the surface of glass can be solved.

The invention discloses a preparation method of a crystalline silicon solar passivation contact cell, and belongs to the field of solar cells. The preparation method comprises the steps of manufacturing a tunneling layer on the back surface of N-type crystalline silicon to obtain a first structure body; manufacturing an n+ doped polycrystalline silicon passivation layer on the back surface of thetunneling layer, and then performing edge and front surface etching to obtain a second structure body; performing p+ doping on the front surface of the second structure body to manufacture a P-type layer, and then performing edge and back surface etching to obtain a third structure body; manufacturing a passivation film on the front surface of the third structure body to obtain a fourth structurebody; manufacturing anti-reflection films on the front surface and the back surface of the fourth structure body correspondingly to obtain a fifth structure body; and respectively manufacturing electrodes on the front surface and the back surface of the fifth structure body. The cell is simple in manufacturing process and high in photoelectric efficiency.

The invention discloses a spring clamping piece which consists of a connection end and a pair of elastic slices extending from the connection end to the outer side, wherein the two elastic slices are opposite to each other, and the ends, far away from the connection end, of the elastic slices get close to each other to form a clamping part; and the elastic slices get close to each other at the clamping part along a certain radian, and the positions, the distance between which is smallest, are not located at the end parts of the elastic slices. The invention discloses a carrier device for clamping a silicon slice with the spring clamping piece. The carrier device consists of side plates, a base and the spring clamping piece. Two ends of the base are fixed to the side plates, and the spring clamping piece is connected into the base in a clamping manner. The device disclosed by the invention is arranged in atomic layer deposition equipment, so that a high-quality thin film plated by an atomic layer deposition film plating technology can be obtained, and the problem of circle-plating caused by the atomic layer deposition film plating technology can be solved.

Contact assemblies, electroplating machines with contact assemblies, and methods for making contact assemblies that are used in the fabrication of microelectronic workpieces. The contact assemblies can be wet-contact assemblies or dry-contact assemblies. A contact assembly for use in an electroplating system can comprise a support member and a contact system coupled to the support member. The support member, for example, can be a ring or another structure that has an inner wall defining an opening configured to allow the workpiece to move through the support member along an access path. In one embodiment, the support member is a conductive ring having a plurality of posts depending from the ring that are spaced apart from one another by gaps. The contact system can be coupled to the posts of the support member. The contact system can have a plurality of contact members projecting inwardly into the opening relative to the support member and transversely with respect to the access path. The contact members can comprise electrically conductive biasing elements, such as fingers, that have a contact site and a dielectric coating covering at least a portion of the biasing elements. The contact members can also have a raised feature configured to engage the seed-layer on the workpiece for conducting the current to the seed-layer.

The invention relates to a preparation method of a passivation contact structure. The preparation method comprises the steps of (1) cleaning a silicon wafer substrate; (2) preparing a single-sided n<+> or p<+> doped layer on the surface of the cleaned silicon wafer; (3) depositing a tunneling oxide layer on a non-doped surface; (4) depositing a layer of doped polycrystalline silicon film on the surface of the tunneling oxide layer by adopting a PVD method. Therefore, the passivation contact structure is prepared. The method disclosed by the invention has the main advantages that the doped polycrystalline silicon film is prepared by adopting the PVD method, so that the components of the film can be well controlled; the optimal doping ratio can be debugged according to actual process requirements; the polycrystalline silicon film prepared through single-side film forming is high in deposition rate and good in compactness; and the problems that in the industrialization process of an existing solar cell in an N-type passivation contact structure, the front face appearance is poor, and the electrical property is reduced can be well solved.

The invention relates to a device and method for avoiding rotary coating of two-sided solar cell silicon nitride coated film. The device comprises a graphite frame and a plurality of supporting hooks arranged on the graphite frame. Each supporting hook comprises a body and a hook body, wherein a hook point is formed at the free end of the hook body and is not lower than the lower surface of the graphite frame but not 1 mm higher than the lower surface of the graphite frame. The hook points of all the supporting hooks are located on the same horizontal plane. During two-sided coating, a to-be-coated silicon wafer obtained through earlier stage processing of a two-sided solar cell technique is put on the supporting devices of the device, the silicon wafer enters the device, one surface of the silicon wafer is coated, and then the silicon wafer with one surface coated is turned by 180 degrees, so that the other surface is coated. Compared with the prior art, the device and method have the advantages that the application range is wide, safety and reliability are achieved, the stability performance is good, overhauling is convenient, the maintenance frequency is low, the technical performance is good, and the problem of edge chromatic aberration caused by rotary coating of the plate-type coated film can be solved.

An in situ low-power wireless measurement apparatus and method suitable for reporting a soil moisture profile at various zones.