Graphite boat pretreatment substitution piece and graphite boat pretreatment method

Abstract

The invention provides a graphite boat pretreatment substitution piece and a graphite boat pretreatment method. In the prior art, a graphite boat is pretreated through no-load pretreatment or silicon chip fully-loaded pretreatment, which causes relatively-high cost or bad pretreatment effect. The shape of the graphite boat pretreatment substitution piece is matched with process clamping points; the marginal area thickness range of the substitution piece is 100-300 mum, and the central area thickness range of the substitution piece is 1-3 mm; and thus the substitution piece can be reused many times. The graphite boat pretreatment method is characterized by, to begin with, providing a graphite boat for pretreatment, the graphite boat being provided with a plurality of process clamping points; next, providing a graphite boat pretreatment substitution piece, the number of which is matched with that of the graphite boat; then, arranging the graphite boat pretreatment substitution piece on the process clamping points of the graphite boat; and at last, arranging the graphite boat to chemical vapor deposition equipment to deposit silicon nitride. Therefore, the cost of pretreatment can be reduced, and the performance of the pretreatment is improved.

Description

Technical field [0001] The invention relates to the field of solar cell manufacturing, in particular to a graphite boat pretreatment replacement sheet and a graphite boat pretreatment method. Background technique [0002] At present, most of the antireflection films made on the surface of crystalline silicon cells use silicon nitride films, which have good light antireflection and surface passivation effects, and are dielectric films with excellent physical and chemical properties. In the solar cell production process, CVD (Chemical Vapor Deposition) is commonly used, and one of the most common methods is tubular PECVD (Plasma Enhanced Chemical Vapor Deposition). In the process of the tubular PECVD equipment, in order to realize the one-time plating of multiple silicon wafers, it is necessary to fix the multiple silicon wafers in a graphite boat with special structural requirements. Graphite boat as a carrier tool for silicon wafers has good electrical conductivity, thermal cond...

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Problems solved by technology

[0005] The above two pretreatment methods have the following problems respectively: during the pretreatment of the empty boat, the process stuck point is exposed and there is no object to block it, so during the pretreatment process, the process stuck point and the gap between the process stuck point and the boat sheet will be The silicon nitride film is deposited, which causes the conductivity and thermal conductivity between the process stuck point and the silicon wafer to be affected during the normal coating process, resulting in uneven deposition of the silicon nitride film, resulting in a large amount of rework and affecting product quality Silicon nitride film aberration film; when fully loaded with silicon wafer pretreatment, the gap between th

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