Spring clamping piece and carrier device of elastic clamping silicon slice

Abstract

The invention discloses a spring clamping piece which consists of a connection end and a pair of elastic slices extending from the connection end to the outer side, wherein the two elastic slices are opposite to each other, and the ends, far away from the connection end, of the elastic slices get close to each other to form a clamping part; and the elastic slices get close to each other at the clamping part along a certain radian, and the positions, the distance between which is smallest, are not located at the end parts of the elastic slices. The invention discloses a carrier device for clamping a silicon slice with the spring clamping piece. The carrier device consists of side plates, a base and the spring clamping piece. Two ends of the base are fixed to the side plates, and the spring clamping piece is connected into the base in a clamping manner. The device disclosed by the invention is arranged in atomic layer deposition equipment, so that a high-quality thin film plated by an atomic layer deposition film plating technology can be obtained, and the problem of circle-plating caused by the atomic layer deposition film plating technology can be solved.

Description

technical field [0001] The invention relates to an elastic clip and a carrier device using the elastic clip to clamp a silicon chip, which realizes that in the atomic layer deposition equipment, two silicon chips can be closely overlapped and placed, avoiding the problems caused by the atomic layer deposition coating technology. around the plating problem. Background technique [0002] In order to improve the efficiency of solar cells, a dielectric passivation layer is usually added on the backside of the cell to form a Passivated Emitter Rear Contact Solar Cell (PERC), which reduces the recombination of electrons and holes and improves the conversion efficiency of the cell. [0003] At present, in order to form a photovoltaic cell (or solar cell) with a passivation emitter back contact in this field, Al2O3 is usually used as a passivation layer to be plated on the photovoltaic cell, and there are two main coating methods for the photovoltaic cell, one One is plasma-enhance...

AI Technical Summary

Problems solved by technology

[0004] Compared with the coating method of atomic layer deposition, the chemical vapor deposition method (PECVD) has the disadvantages of low utilization rate of expensive chemical sources, frequent maintenance cycles (less than 7 days), low film quality and inability to accurately control film formation when the film thickness is below 20nm Thickness, film has shortcomings such as pinholes, defects and impurities. Therefore, in order to obtain higher film quality, more accurate film thickness and lower production costs, the coating method of atomic layer deposition has greater market value and better prospects

[0005] However, due to its good wrapping properties, the atomic layer deposition coating method needs to solve the technical problem of anti-wrapping plating when coating the backside (single side) of silicon wafers.

To solve this problem, there is currently a solution, see patent US2015086729A1, which proposes a coating method that can be used for passivation of photovoltaic cells. This method is to install gas nozzles on the upper and lower sides of the substrate. Only spray reactive gas on one side, and spray inert gas on the other side to avoid winding plating, but this method has disadvantages such as low utilization rate of expensive chemical sources and low output per unit time

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