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Coding type flash memory device, system and coding method

A coding method and a technology of flash memory, which are applied in the field of semiconductor devices and integrated circuits, can solve problems such as complex design of output units and inability to guarantee calculation accuracy

Active Publication Date: 2020-09-04
PEKING UNIV
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Problems solved by technology

[0004] In order to solve the technical problems that the calculation accuracy cannot be guaranteed and the output unit design is complicated when the encoded flash memory system based on the analog operation of the 3D NAND FLASH structure has high fluctuations in the threshold value between different storage units in the prior art, this paper The invention discloses an encoded flash memory device, system and encoding method

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  • Coding type flash memory device, system and coding method
  • Coding type flash memory device, system and coding method
  • Coding type flash memory device, system and coding method

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Embodiment Construction

[0031] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0032] In order to solve the technical problems that the calculation accuracy cannot be guaranteed and the output unit design is complicated when the encoded flash memory system based on the analog operation of the 3D NAND FLASH structure has high fluctuations in the threshold value between different storage units in the prior art, this paper The invention discloses a coded flash memory device, system and coding method. The coded flash memory device implements a deep neural network based on an adder-assisted 3D NAND FLASH structure.

[0033] In the embodiment of the present invention, the deep neural network includes multiple computing layers (fully connected layers or convolutional layers) for data processing, and the cod...

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Abstract

The invention discloses an encoding type flash memory device, an encoding type flash memory system and an encoding method. The encoding type flash memory device comprises at least one flash memory array structure unit, a plurality of sense amplifiers and a plurality of adders, wherein each flash memory array structure unit in the at least one flash memory array structure unit is a 3D NAND FLASH array structure unit; each sense amplifier in the plurality of sense amplifiers is correspondingly connected with each source line of each flash memory array structure unit, and is used for converting the voltage of the source line of each correspondingly connected source line into an output result in a binary form; and each adder in the plurality of adders is connected with the plurality of sense amplifiers of each flash memory array structure unit through each corresponding source line, and is used for carrying out summation operation on a plurality of output results of the plurality of senseamplifiers corresponding to each flash memory array structure unit so as to achieve a deep neural network. The output unit of the encoding type flash memory device is simple in design, and meanwhile the accuracy of encoding operation is guaranteed.

Description

technical field [0001] The invention relates to the technical field of semiconductor devices and integrated circuits, in particular to an encoding flash memory device, system and encoding method for realizing a deep neural network. Background technique [0002] Deep neural networks have shown excellent performance in image processing and speech recognition, and are widely used in advanced technology fields such as autonomous driving, intelligent medical care, and security monitoring. The traditional von Neumann computing architecture separates the storage unit from the computing unit, and transmits data through the bus. The speed is slow, and the energy and hardware resource consumption is large, which limits the improvement of the data processing efficiency and energy efficiency ratio of the deep neural network. For this reason, the prior art provides an encoded flash memory system based on the analog operation of the 3D NAND FLASH structure. However, in the existing coded...

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Application Information

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IPC IPC(8): G11C16/04G11C16/08G11C16/24G11C16/26G06F7/501G06N3/063
CPCG11C16/0483G11C16/08G11C16/24G11C16/26G06F7/501G06N3/063
Inventor 黄鹏项亚臣康晋锋刘晓彦
Owner PEKING UNIV
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