Encoded flash memory device, system and encoding method

Abstract

The invention discloses a coded flash memory device, system and coding method. The coded flash memory device includes: at least one flash memory array structure unit, a plurality of sensitive amplifiers and a plurality of adders, and each flash memory in at least one flash memory array structure unit The array structure unit is a 3D NAND FLASH array structure unit; each sense amplifier in the plurality of sense amplifiers is correspondingly connected to each source line of each flash memory array structure unit, and is used to convert the source line voltage of each correspondingly connected source line is the output result in binary form; each adder in the plurality of adders is connected with a plurality of sense amplifiers of each flash memory array structural unit through each corresponding source line, and is used to connect the multiple corresponding to each flash memory array structural unit Multiple output results of a sense amplifier are summed to realize a deep neural network. The output unit of the encoding type flash memory device of the present invention is simple in design, and at the same time ensures the accuracy of the encoding operation.

Description

technical field [0001] The present invention relates to the technical field of semiconductor devices and integrated circuits, and in particular, to a coding flash memory device, system and coding method for realizing a deep neural network. Background technique [0002] Deep neural networks show excellent performance in image processing and speech recognition, and are widely used in advanced technology fields such as autonomous driving, smart medical care, and security monitoring. In the traditional Von Neumann computing architecture, the storage unit and the computing unit are separated, and the data is transmitted through the bus. To this end, the prior art provides a coded flash memory system based on the analog operation of the 3D NAND FLASH structure. However, in the existing coded flash memory system, when the fluctuation of the threshold value between different memory cells is high, the calculation accuracy cannot be guaranteed, and the design of the output cell is al...

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Problems solved by technology

[0004] In order to solve the technical problems that the calculation accuracy cannot be guaranteed and the output unit design is complicated when the encoded flash memory system based on the analog operation of the 3D NAND FLASH structure has high fluctuations in the threshold value between different storage units in the prior art, this paper The invention discloses an encoded flash memory device, system and encoding method

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