Super junction surface metal oxide semiconductor field effect transistor structure

An oxide semiconductor and field effect transistor technology, applied in the field of super junction metal oxide semiconductor field effect transistor structure, can solve the problems of circuit board damage, economic loss, explosion of super junction transistor, etc., and achieves safe and convenient use and structure. scientifically sound effects

Active Publication Date: 2020-09-15
深圳市创然电子有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The purpose of the present invention is to provide a super junction metal oxide semiconductor field effect transistor structure, to solve the above-mentioned background technology when the super junction metal oxide semiconductor field effect transistor is installed on the circuit board, circuit board installation occurs When it is wrong, the super junction metal oxide semiconductor field effect transistor may explode, causing damage to the entire circuit board and causing economic losses.

Method used

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  • Super junction surface metal oxide semiconductor field effect transistor structure
  • Super junction surface metal oxide semiconductor field effect transistor structure
  • Super junction surface metal oxide semiconductor field effect transistor structure

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Effect test

Embodiment 1

[0035] A super junction metal oxide semiconductor field effect transistor structure, comprising a super junction metal oxide semiconductor field effect transistor 1, a plurality of output terminals 2 are installed on the bottom of the super junction metal oxide semiconductor field effect transistor 1, the super junction The outer wall of the metal oxide semiconductor field effect transistor 1 is provided with a protection mechanism 3, the protection mechanism 3 includes a box body 301 and a first through hole 302, the inner wall of the box body 301 and the outer wall of the super junction metal oxide semiconductor field effect transistor 1 fit together, so that the super junction metal oxide semiconductor field effect transistor 1 can be placed on the inner wall of the box body 301, the bottom of the box body 301 is processed with a plurality of first through holes 302, and the inner walls of the plurality of first through holes 302 are respectively The gap fits with the outer ...

Embodiment 2

[0037] As an option, see Figure 1-4 , super junction metal oxide semiconductor field effect transistor structure, the left and right sides of the inner wall of the box body 301 are provided with a fixing mechanism 4, the fixing mechanism 4 includes an elastic piece 401 and a bolt 402. Two elastic pieces 401 are respectively arranged on the sides of the box body 301 On the left and right sides of the inner wall, two elastic sheets 401 are respectively threadedly connected to the left and right sides of the inner wall of the box body 301 through a plurality of bolts 402, and the inner sides of the two elastic sheets 401 are offset against the outer wall of the super junction metal oxide semiconductor field effect transistor 1 Tight, so that the super junction metal oxide semiconductor field effect transistor 1 can be fixed on the inner wall of the box body 301 through the elastic sheet 401, and the two elastic sheets 401 are symmetrically distributed about the super junction met...

Embodiment 3

[0040] As an option, see figure 1 , 5 And 6, super junction metal oxide semiconductor field effect transistor structure, the top of box body 301 is provided with heat dissipation mechanism 5, and heat dissipation mechanism 5 comprises box body cover 501, card groove 502 and second through hole 503, and box body cover 501 The inner wall is matched with the top of the outer wall of the box body 301 in clearance, and the top left and right sides of the box body cover 501 are fixedly connected with card slots 502, and the top of the box body cover 301 is processed with a plurality of second through holes 503, and the second through holes 503 are used In order to dissipate and dissipate the heat generated by the super junction metal oxide semiconductor field effect transistor 1, the gap between the inner wall of the box cover 501 and the outer wall of the box body 301 is 0.5-1 mm, so that the box cover 501 can be stably reconciled in the box body On the outer wall of 301 , the sec...

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PUM

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Abstract

The invention discloses a super junction surface metal oxide semiconductor field effect transistor structure, which comprises a super junction metal oxide semiconductor field effect transistor, wherein a plurality of output ends are installed at the bottom of the super junction surface metal oxide semiconductor field effect transistor, and the inner walls of a plurality of first through holes arein clearance fit with the outer walls of the plurality of output ends respectively. According to the super junction surface metal oxide semiconductor field effect transistor structure, the circumstances that the super junction metal oxide semiconductor field effect transistor may explode when the circuit board has an error in installation, the overall circuit board is damaged, and economic loss iscaused are avoided. According to the super junction surface metal oxide semiconductor field effect transistor structure, the super junction surface metal oxide semiconductor field effect transistor can dissipate heat through second through holes, and a box body cover and a box body can be stably connected through the clamping connection of a clamping rod and a clamping groove.

Description

technical field [0001] The invention relates to the technical field of transistors, in particular to a super junction metal oxide semiconductor field effect transistor structure. Background technique [0002] A transistor (transistor) is a solid semiconductor device (including diodes, triodes, field effect transistors, thyristors, etc., sometimes specifically bipolar devices), with multiple functions such as detection, rectification, amplification, switching, voltage stabilization, and signal modulation , although the existing super junction metal oxide semiconductor field effect transistor can realize the control of the circuit, but when the super junction metal oxide semiconductor field effect transistor is installed on the circuit board and the circuit board is installed incorrectly, the super junction Surface metal oxide semiconductor field effect transistors may explode, causing damage to the entire circuit board and causing economic losses. Contents of the invention ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H05K1/02H05K1/18
CPCH05K1/184H05K1/0201H05K1/02H05K1/0271
Inventor 不公告发明人
Owner 深圳市创然电子有限公司
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