Defect identification method of semiconductor laser

Abstract

The invention provides a defect identification method of a semiconductor laser. The defect identification method comprises the following steps: acquiring a first relation curve graph of capacitance and frequency of a semiconductor laser in an aging process; and acquiring defect energy level information and / or defect distribution information of the semiconductor laser according to the first relation curve graph. The invention further provides another defect identification method of a semiconductor laser, which comprises the following steps: acquiring a second relation curve graph of the apparent carrier concentration and the depletion region width of a semiconductor laser in the aging process; and acquiring defect distribution information of the semiconductor laser according to the second relation curve graph. According to the invention, the defect identification of the semiconductor laser is carried out by adopting the electrical characteristics of the semiconductor laser, and the defect identification is carried out without adopting a cutting method with permanent damage to cut a semiconductor material, so that the defect of the semiconductor laser can be identified in a nondestructive manner, and the permanent damage to the semiconductor laser is avoided.

Description

technical field [0001] The invention belongs to the field of optoelectronic technology, and in particular relates to a defect identification method of a semiconductor laser capable of non-destructively identifying defects of the semiconductor laser. Background technique [0002] As an important semiconductor light-emitting device, semiconductor lasers have broad application prospects in the fields of laser display and laser lighting. In the manufacture of semiconductor lasers, a large number of defects will be generated during the production process such as growing semiconductor materials. [0003] The traditional method of defect identification in semiconductor lasers can only identify defects on the surface of semiconductor materials. If it is necessary to identify defects inside the semiconductor material, the only way to identify defects is to choose a cutting method with permanent damage after cutting the semiconductor material. However, this usually Will cause permane...

AI Technical Summary

Problems solved by technology

In the production of semiconductor lasers, a large number of defects will be generated during the production process of growing semiconductor materials.

[0003] The traditional method of defect identification in semiconductor lasers can only identify defects on the surface of semiconductor materials. If it is necessary to identify defects inside the semiconductor material, the only way to identify defects is to choose a cutting method with permanent damage after cutting the semiconductor material. However, this usually Will cause permanent damage to the semiconductor laser

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