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Positive and negative voltage generation circuit

A technology for generating circuits and positive and negative voltages, applied in the field of positive and negative voltage generating circuits, which can solve the problems of large peak current and mismatch of working states of charge pumps, and achieve the effect of reducing peak current.

Active Publication Date: 2020-09-18
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, establishing a negative voltage and a positive voltage at the same time will cause two large currents to superimpose and produce a large peak current; establishing separately will cause the problem of mismatching working states of the two charge pumps, that is, one charge pump has already established a good voltage, while the other The charge pump has not started to work, or, one charge pump has not yet established the return voltage, and the other charge pump has started to work, resulting in two large currents

Method used

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Embodiment Construction

[0038] The technical solutions in the present application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are a part of the embodiments of the present application, but not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative work fall within the protection scope of the present application.

[0039] In the description of this application, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. The indicated orientation or positional relationship is based on the orientation or positional relationship shown in the accompanying drawings, which is only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the indicated device or element must have a ...

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Abstract

The invention discloses a positive and negative voltage generation circuit, and relates to the field of flash memory devices; the positive and negative voltage generation circuit at least comprises apositive voltage generation circuit, a negative voltage generation circuit and a trigger circuit; the negative voltage generation circuit is connected with the input end of the trigger circuit, and the trigger circuit is connected with the positive voltage generation circuit; the negative voltage generation circuit is used for generating a target negative voltage; the trigger circuit is used for triggering the positive voltage generation circuit when the negative voltage generation circuit finishes generating the target negative voltage; the positive voltage generation circuit is used for starting to generate a target positive voltage under the triggering of the triggering circuit; the target positive voltage and the target negative voltage are used for controlling the flash memory deviceto perform erasing operation; the problem that large peak current is easily caused when negative voltage and positive voltage are established in sequence at present is solved; the effects of staggering the peak current of the positive charge pump and the negative charge pump and reducing the peak current of the whole circuit are achieved.

Description

technical field [0001] The present application relates to the field of flash memory devices, in particular to a positive and negative voltage generating circuit. Background technique [0002] As a non-volatile semiconductor storage device, flash memory device is widely used in various electronic products such as mobile phones, notebook computers, U disks, etc. due to its high speed, high density, and data retention after power failure. When using a flash memory device, it is necessary to provide a corresponding erasing voltage when the flash memory device is erased. For example, a flash memory device using a NORD structure needs to add a higher positive voltage to the word line during erasing. Apply a lower negative voltage to the control gate. [0003] When erasing a flash memory device, there are two main ways to establish the positive voltage and the negative voltage: 1. The positive charge pump and the negative charge pump work at the same time, and the positive voltage...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C16/14G11C16/30G11C5/14
CPCG11C16/14G11C16/30G11C5/145
Inventor 黄明永
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP