Ion implanter and ion implantation method

Abstract

The invention aims to appropriately monitor the generation status of neutron rays at low cost. An ion implanter (100) includes: a plurality of devices which are disposed along a beamline (BL) along which an ion beam is transported; a plurality of neutron ray measuring instruments (51,52,53,54) which are disposed at a plurality of positions in the vicinity of the beamline and measure neutron rays which are generated at a plurality of locations of the beamline due to collision of a high-energy ion beam; and a control device which monitors at least one of the plurality of devices, based on a measurement value in at least one of the plurality of neutron ray measuring instruments (51-54).

Description

technical field [0001] This application claims priority based on Japanese Patent Application No. 2019-051015 filed on March 19, 2019. The entire contents of this Japanese application are incorporated herein by reference. [0002] The invention relates to an ion implantation device and an ion implantation method. Background technique [0003] In the semiconductor manufacturing process, a process of implanting ions into a semiconductor wafer is routinely performed for the purpose of changing the conductivity, the purpose of changing the crystal structure of the semiconductor wafer, and the like. The equipment used in this process is generally called an ion implantation equipment. The ion implantation energy is determined according to the desired implantation depth of the ions implanted near the surface of the wafer. A low-energy ion beam is used for implantation into a shallow region, and a high-energy ion beam is used for implantation into a deep region. [0004] In recen...

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Problems solved by technology

However, if a plurality of neutron beam detectors are arranged along a long beamline in order to measure neutron rays with high accuracy over the entire beamline, the cost will increase significantly

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