Check patentability & draft patents in minutes with Patsnap Eureka AI!

Light-emitting element

A light-emitting element and light-transmitting technology, which can be used in electrical components, semiconductor devices, circuits, etc., to solve problems such as reduced light extraction efficiency

Pending Publication Date: 2020-10-20
NICHIA CORP
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

These metal electrodes and light-transmitting conductive films reduce light extraction efficiency due to light absorption

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Light-emitting element
  • Light-emitting element
  • Light-emitting element

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0020] Embodiments will be described below with reference to the drawings. In addition, in each drawing, the same code|symbol is attached|subjected to the same element.

[0021] Figure 1A It is a schematic plan view of a light emitting element according to an embodiment of the present invention. Figure 1B yes Figure 1A Schematic cross-sectional view at line IB-IB.

[0022] The light-emitting element of the embodiment is, for example, an upward emission type light-emitting element in which the surface on the p-type semiconductor layer side of a semiconductor laminate in which an n-type semiconductor layer, a light-emitting layer (active layer), and a p-type semiconductor layer are stacked is the light extraction surface. Figure 1A It is a plan view of the light extraction surface of the light emitting element.

[0023] A p-side electrode 17 and an n-side electrode 18 are arranged on the light extraction surface. The p-side electrode 17 has a plate portion 17a and an exten...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

Provided is a light-emitting element capable of improving light extraction efficiency. A p-side electrode has a plate portion and an extension portion that is continuous in a first direction from theplate portion. The opening of the light-transmitting conductive film has a first opening and a second opening. The width of the first opening is less than the width of the second opening in a second direction orthogonal to the first direction. The width of the extending portion of the p-side electrode is less than the width of the second opening portion in the second direction. In the second direction, a light-transmitting conductive film provided adjacent to the region in which the first opening is disposed among the light-transmitting conductive films is electrically connected to the extended portion of the p-side electrode.

Description

technical field [0001] The present invention relates to a light emitting element. Background technique [0002] There is a structure of a light-emitting element in which a light-transmitting conductive film is formed so as to be in contact with an upper portion of a metal electrode disposed on a light-extracting surface of the light-emitting element to diffuse current over a wide area of ​​a semiconductor layer. These metal electrodes and the light-transmitting conductive film reduce light extraction efficiency due to light absorption. Therefore, in Patent Document 1, for example, it is proposed to provide SiO having a lower refractive index than the light-transmitting conductive film between the light-transmitting conductive film and the semiconductor layer in the region directly under the metal electrode. 2 A structure such as an insulating film, or a structure in which a reflective film such as Al is provided under a metal electrode, but it is desired to further improve ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/38H01L33/42H01L33/44
CPCH01L33/38H01L33/42H01L33/44H01L33/382H01L33/46H01L33/405
Inventor 北滨俊
Owner NICHIA CORP
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com