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Equipotential drop field device for eliminating curvature effect in body and method for manufacturing same
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A technology of internal curvature and effect, applied in the field of potential drop field devices and its manufacturing, can solve the problems of limiting the withstand voltage of devices, increasing the electric field at the bottom of the groove, etc.
Active Publication Date: 2022-03-08
UNIV OF ELECTRONICS SCI & TECH OF CHINA +1
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However, since the vertical floating field plate near the drain end clamps the potential in the body, the equipotential lines are concentrated at the bottom of the groove, causing premature breakdown of the device and limiting the further improvement of the device's withstand voltage
The invention proposes an equipotential drop-field device and its manufacturing method that eliminates the curvature effect in the body, which solves the problem of increasing the electric field at the bottom of the groove caused by the curvature effect in the device, has a higher breakdown voltage, and its manufacturing method is relatively Simple
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Embodiment 1
[0048] A kind of equipotential drop field device that eliminates the curvature effect in the body described in embodiment 1, such as Figure 1-3 Shown, including cell region and terminal region.
[0049] The cell region includes: a first conductivity type semiconductor substrate 11, a first conductivity type well region 12, a first conductivity type source heavily doped region 13, a second conductivity type drift region 21, a second conductivity type well region 22, The second conductivity type source heavily doped region 23, the second conductivity type drain heavily doped region 24, the first dielectric oxide layer 31, the second dielectric oxide layer 32, the third dielectric oxide layer 33, the polysilicon electrode 41, the control Gate polysilicon electrode 42, metal strip 51, source metal 52, drain metal 53;
[0050] Wherein, the drift region 21 of the second conductivity type is located above the semiconductor substrate 11 of the first conductivity type, the well regio...
Embodiment 2
[0075] Such as Figure 4 As shown, it is a schematic diagram of the structure of the cell region of an equipotential drop field device that eliminates the curvature effect in the body of Example 2. The difference between this example and the structure of Example 1 is that the vertical floating field plate closest to the first A column of the two-conductivity type well region 22 is connected to the drain electrode 53 through the metal strip 51, which optimizes the surface potential distribution of the drain end of the device, reduces the electric field at the drain end, and improves the withstand voltage of the device. Its working principle is basically the same as that of Embodiment 1.
Embodiment 3
[0077] Such as Figure 5 As shown, it is a schematic diagram of the cell region structure of an equipotential drop field device in Example 3 that eliminates the curvature effect in the body. The difference between this example and the structure of Example 1 is that the vertical floating field plate closest to the first A column of well regions 12 of a conductivity type is connected to the source electrode 52 through the metal strip 51, which optimizes the surface potential distribution of the gate end of the device, so that the electric field here is reduced and the withstand voltage of the device is increased. At the same time, the vertical floating field plate is connected to the source metal, which reduces gate-drain overlap and reduces gate-drain capacitance, and its working principle is basically the same as that of Embodiment 1.
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Abstract
The invention provides an equipotential drop field device and a manufacturing method for eliminating the curvature effect in the body, including a cell region and a terminal region. In the cell region, the first dielectric oxide layer and the polysilicon electrode form a vertical floating field plate, and the vertical floating field plate is distributed throughout the drift region of the second conductivity type, and the drain terminal is introduced into the polysilicon electrode by the same process and connected to the drain longitudinal field plate. In the present invention, the vertical floating field plate assists in depleting the drift region and improves the withstand voltage of the device. However, because the vertical floating field plate close to the drain terminal clamps the internal potential, the equipotential lines are concentrated at the bottom of the groove, resulting in premature breakdown of the device. The vertical field plate at the drain end is connected to the drain, and the high potential of the drain end is introduced into the device body, which eliminates the curvature effect in the body and further improves the withstand voltage of the device. In the termination area, the vertical floating field plate is ring-shaped to bear most of the withstand voltage, and the longitudinal field plate at the drain end forms a semicircular array, which alleviates the further increase of the electric field at the bottom of the groove near the drain end due to the increase in curvature.
Description
technical field [0001] The invention belongs to the field of power semiconductors, and mainly provides an equipotential drop field device and a manufacturing method thereof for eliminating the curvature effect in the body. Background technique [0002] Power semiconductor devices have been widely used in consumer electronics, computers and peripherals, network communications, electronic special equipment and instruments, automotive electronics, LED Display and electronic lighting and many other aspects. Since the source, gate, and drain of lateral devices are all on the chip surface, they are easy to integrate with other devices and circuits through internal connections, and are widely used in power integrated circuits. In the design of lateral devices, the devices are required to have high breakdown voltage and low specific on-resistance. A higher breakdown voltage requires a device with a longer drift region length and a lower drift region doping concentration, but this ...
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