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Edge-emitting high-power laser and method of manufacturing the same

A high-power laser and edge-emitting technology, which is applied in the direction of lasers, laser components, semiconductor lasers, etc., can solve the problems of easy burnout of the laser cavity surface, and achieve the effects of avoiding heat burnout, reducing end surface heating, and improving power and reliability.

Active Publication Date: 2021-02-26
江西德瑞光电技术有限责任公司
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  • Abstract
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  • Claims
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Problems solved by technology

[0007] In view of the above situation, it is necessary to provide a side-emitting high-power laser and its manufacturing method to solve the problem that the laser cavity surface of the side-emitting high-power laser is easy to burn

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  • Edge-emitting high-power laser and method of manufacturing the same
  • Edge-emitting high-power laser and method of manufacturing the same
  • Edge-emitting high-power laser and method of manufacturing the same

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Embodiment Construction

[0042] In order to facilitate the understanding of the present invention, the present invention will be described more fully below with reference to the associated drawings. Embodiments of the invention are shown in the accompanying drawings. However, the present invention can be embodied in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing the embodiments is to make the disclosure of the present invention more thorough and comprehensive.

[0043] It should be noted that when an element is referred to as being “fixed on” another element, it may be directly on the other element or there may be an intervening element. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or intervening elements may also be present. The terms "vertical," "horizontal," "left," "right," and similar expressions are used herein for purposes of illustration only. ...

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Abstract

An edge-emitting high-power laser and a manufacturing method thereof, the edge-emitting high-power laser includes: an N-type substrate; an N-type buffer layer disposed on the N-type substrate; an N-type cladding layer disposed on the N-type type buffer layer; the lower waveguide layer is arranged on the N-type cladding layer, and the lower waveguide layer is not doped; the active region is arranged on the lower waveguide layer, and the active region is not doped; The upper waveguide layer is arranged on the active region, and the upper waveguide layer is not doped; the P-type cladding layer is arranged on the upper waveguide layer, and the two ends of the P-type cladding layer are respectively provided with an insulating layer , the insulating layer is used to limit the injection of carriers at the end face of the waveguide; the P-type ohmic contact layer is arranged on the P-type cladding layer, and the P-type cladding layer and the P-type ohmic contact layer are etched A ridged waveguide is formed. The edge-emitting high-power laser in the invention can prevent the cavity surface of the laser from being burned by heat, and improves the power and reliability of the laser.

Description

technical field [0001] The invention relates to the technical field of semiconductor lasers, in particular to an edge-emitting high-power laser and a manufacturing method thereof. Background technique [0002] Semiconductor high-power lasers are widely used in industrial manufacturing, lidar, sensing, communication, aerospace and other fields. Due to the advantage that the cavity length of edge-emitting lasers is easy to extend, it is more suitable for the manufacture of high-power lasers. At present, semiconductor high-power lasers generally adopt the edge-emitting structure, that is, the light-emitting surface is the end surface of the waveguide. [0003] The cavity surface of an edge-emitting laser is generally the cleavage surface of a semiconductor crystal. Since the cleavage surface of the crystal is very flat and smooth like a mirror, it is a very good reflective surface, so the two cleavage end surfaces of the chip naturally form a resonant cavity of the edge-emittin...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/22H01S5/183
CPCH01S5/18311H01S5/2215
Inventor 柯毛龙李春勇舒凯仇伯仓徐化勇冯欧
Owner 江西德瑞光电技术有限责任公司
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