Semiconductor device and electronic apparatus including same
A technology of semiconductors and conductive pillars, applied in the direction of semiconductor devices, semiconductor/solid-state device components, circuits, etc.
Pending Publication Date: 2020-10-27
HUAWEI TECH CO LTD
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- Claims
- Application Information
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Problems solved by technology
[0004] The present application provides a semiconductor device for solving the problem of local hot spots in the semiconductor device to a certain extent
Method used
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[0048] Embodiments to which the present application relates will be described in more detail below with reference to the accompanying drawings. As used herein, the term "comprise" and its variants mean open inclusion, ie "including but not limited to". The term "or" means "and / or" unless otherwise stated. The term "and / or" in this article is just an association relationship describing associated objects, which means that there can be three relationships, for example, A and / or B can mean: A exists alone, A and B exist simultaneously, and there exists alone B these three situations. The term "based on" means "based at least in part on". The terms "one example embodiment" and "one embodiment" mean "at least one example embodiment." The term "another embodiment" means "at least one further embodiment". The terms "first", "second", etc. may refer to different or the same object. Other definitions, both express and implied, may also be included below.
[0049] Any reference to...
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Abstract
The invention relates to a semiconductor device and electronic equipment including the same. The semiconductor device includes a first semiconductor layer, a second chip, a heat conduction layer and afirst conductive column, wherein the heat conduction layer is stacked with the first semiconductor layer and the second chip and located between the first semiconductor layer and the second chip, theheat conduction layer is used for conducting heat from the first semiconductor layer and / or the second chip in the heat conduction layer, and the heat conduction coefficient of the heat conduction layer in the horizontal direction is greater than or equal to the heat conduction coefficient of the heat conduction layer in the vertical direction and greater than the heat conduction coefficient of the first semiconductor layer; and the first conductive column penetrates through the heat conduction layer so as to enable the first semiconductor layer to be electrically connected with the second chip through the first conductive column, the first conductive column is electrically insulated from the heat conduction layer, and the extending direction of the first conductive column is the verticaldirection. By adopting the semiconductor device, the local hot spot effect can be reduced.
Description
technical field [0001] The embodiments disclosed in the present application relate to the field of semiconductor technology, and more specifically, to a semiconductor device and an electronic device including the semiconductor device. Background technique [0002] In the packaging process of integrated circuits, semiconductor chips can be bonded to other components such as interconnect layers or packaging substrates, and the resulting packaging structure is called a three-dimensional integrated circuit (3D IC). In 3D ICs, heat dissipation is a challenge. [0003] In typical 3D ICs (e.g., Chip-on-Wafer-on-Substrate (CoWoS) packages), heat can accumulate in the internal region at the bottom of the chip stack, causing significant localized temperature Peaks (also known as hotspots). In addition, hot spots caused by heat generated by high power consumption chips may cause thermal crosstalk issues to surrounding chips, thereby adversely affecting the performance of surrounding ...
Claims
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Patent Timeline
Login to View More IPC IPC(8): H01L23/31H01L23/367H01L25/07H01L23/48H01L23/535
CPCH01L23/3121H01L23/3672H01L25/071H01L23/481H01L23/535H01L23/3732H01L23/3736H01L21/50H01L2924/181H01L2224/16225H01L2224/16145H01L23/3677H01L23/367H01L21/6835H01L2221/68345H01L25/0657H01L2225/06589H01L2225/06541H01L25/18H01L24/05H01L2224/0557H01L21/76898H01L2924/00012H01L25/0652H01L25/0655H01L2225/06527H01L23/373H01L23/4827H01L24/16
Inventor 徐焰姬忠礼陈余
Owner HUAWEI TECH CO LTD