Gas supply system for an ion implanter

Abstract

The present invention relates to a gas supply system for an ion implanter, the system includes a metal chamber, an electrically-insulated chamber, an electrically-insulated hard tube and a flexible tube. A first pipeline and a second pipeline are arranged in the metal chamber, and the bottom of the metal chamber is fixed on the floor through a plurality of electrically-insulated parts; the electrically-insulated chamber is hung on one outer side of the metal chamber, the electrically-insulated hard tube is arranged in the electric insulation box, one end of the electrically-insulated hard tubeis connected with the second pipeline penetrating out of the outer wall of the metal chamber, and the other end of the electrically-insulated hard tube is connected to the flexible pipe fitting penetrating into the electric insulation box. As the electrically-insulated chamber is suspended on one side of the metal chamber, in order to avoid the situation that gas in the electrically-insulated hard tube in the electrically-insulated chamber is affected by high voltage connected with the metal chamber to generate ionization, the doped gas needs to be high-pressure gas. And the electrically-insulated hard tube is connected with the flexible pipe fitting, so that external vibration energy can be absorbed.

Description

technical field [0001] The invention relates to a gas supply system for an ion implanter, in particular to a gas supply system capable of remotely transporting gas for an ion implanter. Background technique [0002] The ion implanter used in the semiconductor equipment factory contains multiple reaction chambers, and each reaction chamber will change the type of doping gas used according to different product process formulations. These doping gases have high voltage dissociation characteristics , is also toxic to the human body; these dopant gases will be pre-packed and placed in a metal chamber of the ion implanter, and connected to the pipeline in the metal chamber, through which the dopant gas will be transported to the ion implanter. Planting machine; this metal room will be electrically connected to the high voltage source, that is, the metal room will be connected to the high potential of the high voltage source, and multiple electrical insulating parts will be set bet...

AI Technical Summary

Problems solved by technology

[0003] Due to the limited capacity of the gas cylinder, if the usage of each reaction chamber in the ion implanter is not properly controlled in the process, the reaction chamber in the process will be depleted of dopant gas, and the process will be forced to stop and cause losses; Therefore, at present, many semiconductor equipment factories have begun to develop how to connect the pipeline of the ion implanter to a large amount of remote stored dopant gas source, so that the gas supply is safe

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