Silicon wafer heating device

Abstract

The invention provides a silicon wafer heating device. The device comprises a cavity and a heating plate arranged in the cavity, wherein a groove used for containing a silicon wafer and matched with the silicon wafer in shape is formed in the heating plate, the inner side wall of the groove is used for heating an edge of the silicon wafer, and the bottom of the groove is used for heating a lower surface of the silicon wafer. According to the silicon wafer heating device provided by the embodiment of the invention, the heating plate is arranged in the cavity, so the silicon wafer can be prevented from being exposed in the external air when being placed on the heating plate for heat treatment, the influence of the external environment is reduced, and accuracy of a test result is improved; meanwhile, a groove for accommodating the silicon wafer is formed in the heating plate, the edge and the lower surface of the silicon wafer can be heated, so the silicon wafer is completely placed on the heating plate, only the upper surface is not heated, damage to the silicon wafer is avoided, warping of the silicon wafer, incapability of subsequent surface metal detection and the like caused by overlarge size and non-uniform surface heating of the silicon wafer are effectively prevented, and influence of an external environment on a test result is effectively prevented.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a silicon wafer heating device. Background technique [0002] With the continuous improvement of the integration level of integrated circuits, it is required that the single crystal silicon wafer used as the substrate has a lower metal content in the semiconductor production process. When the surface and interior of the silicon wafer contain a large amount of metal ions (such as Cu, Ni), the oxide film will be broken down, the performance of the diode and transistor will be deteriorated, the reverse saturation current will increase rapidly, and there may even be a possibility that the entire transistor will be scrapped. use. Therefore, detecting the metal ion content inside and on the surface of silicon wafers is very important in semiconductor production. [0003] The industry's method of detecting the metal content inside the silicon wafer usually adopts the low-temper...

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Problems solved by technology

[0004] However, the research on the LTOD method at the present stage is mainly carried out within the scope of 8-inch wafers, which is not suitable for large-size monocrystalline silicon wafers of 300mm, mainly because the size of the wafer is too large, and the heating plate cannot be used during the heating process. The silicon wafer is evenly heated, resulting in warping of the silicon wafer, which makes it impossible to perform WSPS pretreatment on the silicon wafer, and the test results cannot be obtained, and the heating process of the wafer cannot be reproduced

At the same time, when the silicon wafer is placed on the heating plate for heat treatment, it is placed in the exposed air, which may be affected by the external environment, making the test results inaccurate.

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