Fin-type tunneling field effect transistor structure
A tunneling field effect, transistor technology, applied in semiconductor devices, electrical components, circuits, etc., can solve problems such as unfavorable development of advanced technology nodes
Pending Publication Date: 2020-10-30
SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT +1
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However, this large-scale planar device structure is not conducive to the development of advanced technology nodes (below 14nm)
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[0033] The specific embodiment of the present invention will be further described in detail below in conjunction with the accompanying drawings.
[0034] It should be noted that, in the following specific embodiments, when describing the embodiments of the present invention in detail, in order to clearly show the structure of the present invention for the convenience of description, the structures in the drawings are not drawn according to the general scale, and are drawn Partial magnification, deformation and simplification are included, therefore, it should be avoided to be interpreted as a limitation of the present invention.
[0035] In the following specific embodiments of the present invention, please refer to figure 1 , figure 1 It is a structural schematic diagram of a Fin Tunneling Field Effect Transistor according to a preferred embodiment 1 of the present invention. Such as figure 1 As shown, a fin tunneling field effect transistor structure of the present invent...
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The invention discloses a fin-type tunneling field effect transistor structure which comprises a fin, two ends of the fin are respectively provided with a source and a drain, and the middle part of the fin between the source and the drain is provided with a channel; the fin-type tunneling field effect transistor structure further comprises shallow trench isolation units which comprises a first shallow trench isolation unit and a second shallow trench isolation unit which are respectively arranged at two sides of the fin; and gate electrodes which comprises a first gate electrode and a second gate electrode which are respectively arranged at two sides of the fin and are respectively positioned above the first shallow trench isolation unit and the second shallow trench isolation unit, wherein the first gate electrode is used for realizing regulation and control of threshold voltage, and the second gate electrode is used for realizing the regulation and control of tunneling current. According to the invention, the respective advantages of TFET and FinFET are combined, and different threshold voltages can be realized in one device.
Description
technical field [0001] The invention relates to the technical field of integrated circuit manufacturing and semiconductor devices, in particular to a fin-type tunneling field-effect transistor (Fin-TFET) structure with multiple functions. Background technique [0002] The theoretical minimum value of the subthreshold swing (SS) of a traditional CMOS transistor is about 60mV / dec. However, the subthreshold swing of the tunneling field effect transistor (TFET) can be smaller, that is, the ability of the gate voltage to control the switching of the device is stronger. [0003] At present, the research on tunneling field effect transistor devices mainly focuses on large-sized planar devices. However, this large-scale planar device structure is not conducive to the development of advanced technology nodes (below 14nm). The Fin Field Effect Transistor (FinFET) can be applied to advanced technology nodes due to its advantages such as strong gate control capability. Contents of t...
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IPC IPC(8): H01L29/78H01L29/423
CPCH01L29/7855H01L29/4232
Inventor 罗鑫胡少坚丁宇杨渝书尚恩明
Owner SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT