Resonance structure and manufacturing method thereof
A technology of resonant structures and resonators, applied in the direction of electrical components, impedance networks, etc., can solve the problem of high cost of use
Active Publication Date: 2020-10-30
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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Problems solved by technology
The disadvantage is that its operating frequency is determined by the thickness of the AlN film, so it is difficult to prepare AlN films of different thicknesses on a substrate. The FBAR filter on a single substrate usually has only one operating frequency. If multiple frequency bands need to be filtered, then It is necessary to integrate and package multiple FBAR filters, and the cost of use is relatively high
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[0030] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.
[0031] The present invention finds through research that, for the resonant structure whose cross-section is an elliptical resonant structure whose size ratio between the long symmetry axis and the short symmetry axis is two to one, when the Young's modulus of the material of the resonant structure in the ellipse is When the elliptical resonance is in a specific mode, there is almost no stress and strain at the two endpoints of the short axis of symmetry on the ellipse. That is to say, narrow beams are set at the two ends of the short axis of symmetry to support the elliptical resonant structure. When the ellipse resonates, the stress and strain on it are hardly transmitted to the supporting beams, and the sound waves form ...
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The invention discloses a resonance structure and a manufacturing method thereof. The resonance structure comprises a support beam (1), a resonance body (2), a first electrode (3) and a second electrode (4), wherein the resonance body (2) is interposed between the first electrode (3) and the second electrode (4) while the three are positioned close to each other. The cross section of the resonancebody (2) in the direction parallel to the surface of the first electrode (3) is oval or rhombus, the support beam (1) penetrates through the resonance body (2) in the direction of the short symmetryaxis of the oval or rhombus, and the standing wave length formed by the resonance structure is equal to the size of the short symmetry axis of the oval or rhombus. The energy of the resonance structure is restrained in the resonator and cannot be dissipated outwards along the supporting beam, the quality factor of the resonance structure is guaranteed, the characteristic frequency of the resonancestructure is determined by the size of the short symmetry axis of the cross section of the resonance body, and resonance structures with different resonance frequencies can be conveniently prepared on a single substrate at the same time.
Description
technical field [0001] The invention relates to the technical field of design and manufacture of micro-electromechanical devices, in particular to a resonant structure and a manufacturing method thereof. Background technique [0002] Radio frequency micro-electromechanical system (RF MEMS) resonant devices include resonators and filters. Resonators are used in oscillating circuits to provide local oscillator signals with low phase noise for communication systems; filters are used in communication front-ends to suppress interference signals and effectively improve The utilization rate of frequency resources plays a very important role in radio frequency circuits such as radio frequency transceiver, frequency synthesis, and frequency mixing and amplification. Filters usually consist of resonator connections with low input impedance. [0003] At present, the filters used in the field of mobile communications are basically made of piezoelectric materials, mainly including Surfa...
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IPC IPC(8): H03H3/02H03H9/02H03H9/13
CPCH03H3/02H03H9/02637H03H9/132H03H2003/023Y02D30/70
Inventor 杨帆司朝伟韩国威杨富华宁瑾
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI