Resistive memory cells and resistive memory

Abstract

The present invention provides a resistive memory cell and a resistive memory, wherein the memory cell includes: first to fourth transistors; fifth to eighth transistors; first to sixteen resistive elements; bit line ports, source line port and the first to eighth word line ports; one end of the first to fourth transistors are respectively connected to the bit line port, and the other ends of the first to fourth transistors are respectively connected to the fifth to eighth transistors through a resistive element One end of the transistors is connected to one end, the other ends of the fifth to eighth transistors are respectively connected to the source line ports, and the control ends of the first to eighth transistors are respectively connected to the first to eighth word line ports. Therefore, on the premise of storing 16-bit data, the memory cell can reduce the area of ​​the memory cell occupied by the average data per bit, reduce the word line and its word line driver circuit, reduce the bit line driver circuit and the source line driver circuit, and reduce the The leakage current of the bit line during the read operation is small, thereby improving the storage density and reliability of the resistive memory composed of the memory cells.

Description

technical field [0001] The present invention relates to the technical field of memory, and in particular, to a resistive memory cell and a resistive memory. Background technique [0002] In recent years, research in the field of new memory has received great attention. The current new types of memory include Resistive Random Access Memory (RRAM, Resistive Random Access Memory), Magnetic Random Access Memory (MMRAM, Magnetic Random Access Memory), phase-change random access memory Memory (PCRAM, Phase change RandomAccess Memory), etc.; among them, RRAM uses memristors for storage, forms low and high resistance states by forming and disconnecting conductive filaments in the material, and stores data through high and low resistance states. ' and data '1'; MRAM stores data with magnetoresistance properties, and differentiates data '0' and data '1' according to the different magnetoresistance caused by the direction of magnetization; PCRAM uses special materials in crystalline an...

AI Technical Summary

Problems solved by technology

However, the area of ​​the memory cell is limited by the area of ​​its switch transistor, and the required word line (Word Line, abbreviated as WL) drive circuit, bit line (abbreviated as BL) and source line (source line, abbreviated as SL) driver The circuits are large, so the memory composed of 1T1R memory cells has a low storage density; the bit line leakage current is large during the read operation

resulting in less reliable memory

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