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Distributed feedback laser with micro-cavity structure and preparation method

A distributed feedback and laser technology, which is applied to the structure of lasers, semiconductor lasers, and optical resonators, can solve the problems of large size, high device cost, and unfavorable chip integration, etc., to shorten the structure of the resonator and increase the optical gain. Effect

Pending Publication Date: 2020-11-10
TSINGHUA UNIV
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  • Claims
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Problems solved by technology

[0004] However, there is a problem with the DFB-LD chip at present: the size is large, which is not conducive to chip integration, and at the same time, the device cost is also high due to the large size

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  • Distributed feedback laser with micro-cavity structure and preparation method
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Embodiment Construction

[0034] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments It is a part of embodiments of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.

[0035] figure 1 A top view of a distributed feedback laser with a microcavity structure provided by an embodiment of the present invention is shown; figure 2A cross-sectional view of a distributed feedback laser with a microcavity structure provided by an embodiment of the present invention is shown. image 3 A three-dimensional schematic diagr...

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Abstract

The embodiment of the invention provides a distributed feedback laser with a micro-cavity structure and a preparation method. The distributed feedback laser comprises a P electrode, a P doped layer, aquantum well active layer, an N doped layer and an N electrode, wherein the two sides of the P electrode are each provided with an air micropore waveguide array, the air micropore waveguide arrays are formed by a plurality of first air micropores distributed according to a first preset distribution structure, and each first air micropore penetrates through the P doping layer, the quantum well active layer and the N doping layer and is cut off on the upper surface of the substrate. The distributed feedback laser further comprises a micro-cavity structure, the micro-cavity structure is arrangedunder the P electrode, the micro-cavity structure is formed by a plurality of second air micropores distributed according to a second preset distribution structure, and each second air micropore penetrates through the P doping layer, the quantum well active layer and the N doping layer and is cut off on the upper surface of the substrate. According to the embodiment of the invention, the ultra-short laser resonant cavity is designed by utilizing the slow light effect of the photonic crystal, so the chip size is reduced and the chip integration performance is improved.

Description

technical field [0001] The invention relates to the field of integrated optoelectronic devices, in particular to a distributed feedback laser with a microcavity structure and a preparation method. Background technique [0002] Distributed feedback laser (DFB-LD) is a laser with a Bragg grating built in a semiconductor laser and relying on the mode selection principle of the grating to obtain a specific lasing wavelength. The grating of the DFB laser is distributed in the resonant cavity of the entire laser, and the light wave can obtain gain while feeding back. DFB-LD can generally be divided into two types: gain coupling and refractive index coupling. The former is to engrave the grating structure into the active area, so that the gain of the active area changes periodically, thereby generating feedback to the optical guided mode in the laser cavity. . The latter is to engrave the grating structure above the active region, and generate feedback to the photoconductive mode...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/12H01S5/10
CPCH01S5/1228H01S5/1042H01S5/1003
Inventor 黄翊东崔开宇刘仿冯雪张巍
Owner TSINGHUA UNIV