Fluid director and epitaxial wafer manufacturing equipment

A technology for manufacturing equipment and epitaxial wafers, used in chemical instruments and methods, crystal growth, single crystal growth, etc., can solve the problems of by-product accumulation, affecting the quality of epitaxial wafers, etc. Effect
CN111945221AInactive Publication Date: 2020-11-17XIAN ESWIN MATERIAL TECH CO LTD +1
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Patent Information

Authority / Receiving Office
CN Β· China
Current Assignee / Owner
XIAN ESWIN MATERIAL TECH CO LTD
Publication Date
2020-11-17
Estimated Expiration
Not applicable Β· inactive patent

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Abstract

The invention provides a fluid director and epitaxial wafer manufacturing equipment, and relates to the field of epitaxial wafer preparation. The fluid director is applied to an exhaust part of the epitaxial wafer manufacturing equipment, and the exhaust part comprises a first air inlet and a first air outlet which are oppositely arranged, and an exhaust passage penetrating through the first air inlet and the first air outlet and used for accommodating the fluid director. The fluid director comprises a second air inlet, a second air outlet and a flow guide passage penetrating through the second air inlet and the second air outlet, wherein the second air inlet and the second air outlet are oppositely arranged, and the size of the flow guide passage is gradually reduced in the direction fromthe second air inlet to the second air outlet. The shape and the size of the second air inlet are matched with those of the first air inlet. According to the invention, the problem that the quality of an epitaxial wafer is influenced due to byproduct accumulation when the epitaxial wafer manufacturing equipment is used can be solved.
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Description

technical field

[0001] Embodiments of the present invention relate to the field of epitaxial wafer preparation, and in particular, relate to a deflector and epitaxial wafer manufacturing equipment. Background technique

[0002] Epitaxial wafers are grown as single-crystal thin films on mirror-finished silicon wafers, which have fewer surface defects than existing single-crystal silicon wafers. The above-mentioned epitaxial wafer film has the advantages of high purity, excellent crystal characteristics, and improved number rate of solid semiconductor and characteristics of components.

[0003] Epitaxial wafer basically uses Chemical Vapor Deposition (CBD) equipment to inject silicon-containing source gas in a high-temperature closed reaction furnace (Process chamber) into the surface of a single crystal silicon wafer, so that the single crystal is deposited on the surface and grows.

[0004] See figure 1 , figure 1 It is a schematic diagram of the structure of an epitaxial...

Claims

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