[0031] The technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, rather than all of them. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative work shall fall within the protection scope of the present invention.
[0032] Please refer to image 3 , image 3 It is a top view of a deflector provided by Embodiment 1 of the present invention;
[0033] The present invention provides a flow deflector 20, which is applied to an exhaust component 10 of an epitaxial wafer manufacturing equipment. The exhaust component 10 includes a first air inlet 11 and a first air outlet 12 that are arranged opposite to each other, and pass through the An air inlet and an exhaust passage 13 of the first air outlet for accommodating the deflector 20;
[0034] The deflector 20 includes a second air inlet 21 and a second air outlet 22 oppositely arranged, and a diversion channel 23 penetrating the second air inlet 21 and the second air outlet 22, In the direction from the second air inlet 21 to the second air outlet 22, the size of the guide channel 23 is gradually reduced, and the shape and size of the second air inlet 21 are the same as those of the first air inlet. The shape and size of the mouth 11 match.
[0035] In the embodiment of the present invention, the flow deflector whose size is gradually reduced can effectively guide the gas flowing through the exhaust component and accelerate the flow speed, avoiding the accumulation of by-products during the use of the epitaxial wafer manufacturing equipment and affecting the quality of the epitaxial wafer. problem.
[0036] Please refer to Figure 4 , Figure 4 Is a side view of a flow deflector provided in the first embodiment of the present invention;
[0037] Please refer to Figure 5 , Figure 5 It is a front view of a deflector provided by Embodiment 1 of the present invention;
[0038] In some embodiments of the present invention, optionally, the first air inlet 11 of the exhaust component 10 is a curved surface, and the shape and size of the second air inlet 21 are the same as those of the curved surface. Match the shape and size.
[0039] In the embodiment of the present invention, when the manufactured epitaxial wafer is circular, the first air inlet of the exhaust component is adapted to the outer circumference of the chassis of the epitaxial wafer manufacturing equipment, the first air inlet is arcuate, and the second The shape and size of the air inlet and the first air inlet are matched with the arc surface and are also arc-shaped. At this time, the deflector can effectively guide the gas passing through the first air inlet of the exhaust component.
[0040] In some embodiments of the present invention, optionally, the diversion channel 23 has a trapezoidal pyramid structure, the cross-sections of the second air inlet 21 and the second air outlet 22 are both rectangular, and the cross-section It is a cross section perpendicular to the extending direction of the guide channel 23.
[0041] In the embodiment of the present invention, when the diversion channel is a trapezoidal prism, the cross sections of the second air inlet and the second air outlet perpendicular to the extension direction of the diversion channel are rectangular. The long side of the rectangular cross section of the second air inlet perpendicular to the extension direction of the diversion channel is denoted as a, and the short side is denoted as c; the long side of the rectangular section of the second air outlet perpendicular to the extension direction of the diversion channel is denoted as b, mark the short side as d.
[0042] In some embodiments of the present invention, optionally, the ratio of the long side length of the cross section of the second air inlet 21 to the long side of the second air outlet 22 is in the range of 1.2-1.8.
[0043] In the embodiment of the present invention, the ratio of the length of the long side of the section of the second air inlet to that of the second air outlet is in the range of 1.2-1.8, that is, a:b is in the range of 1.2-1.8, which meets the guideline of the specification size The flow device has a good diversion effect.
[0044] In some embodiments of the present invention, optionally, the ratio of the short side length of the cross section of the second air inlet 21 to the cross section of the second air outlet 22 is in the range of 1.5-1.8.
[0045] In the embodiment of the present invention, the ratio of the shorter side length of the cross section of the second air inlet to that of the second air outlet is in the range of 1.5-1.8, that is, c:d is in the range of 1.5-1.8, which satisfies the guideline of this specification and size. The flow device has a good diversion effect.
[0046] In some embodiments of the present invention, optionally, the angle between at least one side surface of the diversion channel 23 and the extending direction of the diversion channel 23 is an acute angle.
[0047] In the embodiment of the present invention, the diversion channel has multiple side surfaces, and the included angle between at least one of the side surfaces and the extending direction of the diversion channel is an acute angle, which is denoted as e, such as image 3 Shown.
[0048] In some embodiments of the present invention, optionally, the angle of the acute angle is in the range of 15-75 degrees.
[0049] In the embodiment of the present invention, the angle between at least one side surface of the diversion channel and the extension direction of the diversion channel is an acute angle, and the acute angle e is in the range of 15-75 degrees. Good diversion effect.
[0050] In some embodiments of the present invention, optionally, the deflector 20 is made of quartz.
[0051] In the embodiment of the present invention, the quartz material is resistant to high temperature and easy to clean, can also prevent metal contamination of the silicon wafer, and has strong applicability.
[0052] The embodiment of the present invention also provides an epitaxial wafer manufacturing equipment. The epitaxial wafer manufacturing equipment includes at least one exhaust component 10, and each exhaust component 10 is provided with a deflector 20 as described in the first aspect.
[0053] In some embodiments of the present invention, optionally, the exhaust component is usually embedded and installed in the hole of the reaction chamber.
[0054] In the embodiment of the present invention, the epitaxial wafer manufacturing equipment with a deflector inside the exhaust component can avoid the accumulation of by-products and affect the quality of the epitaxial wafer during use.
[0055] In some embodiments of the present invention, optionally, the epitaxial wafer manufacturing equipment includes two exhaust components 10, and the exhaust components 10 are symmetrically arranged.
[0056] In the embodiment of the present invention, the epitaxial wafer manufacturing equipment has two symmetrically arranged exhaust components, and each exhaust component is provided with a deflector as described in any of the above embodiments.
[0057] In some embodiments of the present invention, optionally, the first air inlets 11 of the two exhaust components 10 are adjacent to each other and form a semicircular arc shape.
[0058] In some embodiments of the present invention, the epitaxial wafer is usually circular, the chassis of the epitaxial wafer manufacturing equipment is generally set in a ring shape, and the first air inlet of the exhaust component needs to be adapted to the outer periphery of the chassis; if the epitaxial wafer manufacturing equipment has two For the symmetrically arranged exhaust components, the first air inlets of the two exhaust components are adjacent to each other and form a semicircular arc.
[0059] See Image 6 , Image 6 Is a plan view of gas flow of an epitaxial wafer manufacturing equipment provided in the second embodiment of the present invention;
[0060] See Figure 7 , Figure 7 Is a side view of the gas flow of an epitaxial wafer manufacturing equipment provided in the second embodiment of the present invention;
[0061] The epitaxial wafer manufacturing equipment has two exhaust components 10 symmetrically arranged, and each exhaust component 10 is provided with a deflector 20 as described in any of the above embodiments, which flows through the epitaxial wafer manufacturing equipment base The gas is discharged through the exhaust component 10, and the gas in the exhaust component 10 passes through the size and shape of the second air inlet 21 to match the size of the first air inlet 11, and the diversion channel 23 is along the second air inlet 21 The deflector 20 whose size is gradually reduced in the direction to the second air outlet 22 flows to the exhaust cap 30, which realizes the effective diversion of the gas flowing through the exhaust component 10 and accelerates the diversion speed, thereby avoiding epitaxial wafer manufacturing The problem of accumulation of by-products during equipment use and affecting the quality of epitaxial wafers.
