Low-temperature-drift band-gap reference voltage source

Abstract

The invention provides a low-temperature-drift band-gap reference voltage source which comprises a Brokaw structure band-gap reference circuit, and the Brokaw structure band-gap reference circuit comprises Q1, Q2, R1, R2 and an operational amplifier A. The Brokaw structure band-gap reference circuit further comprises a PM1 and a PM2, the grid electrode of the PM1 is electrically connected with thegrid electrode of the PM2 and the output end of the operational amplifier A, the source electrode of the PM1 is electrically connected with the source electrode of the PM2, and the drain electrode ofthe PM1 is electrically connected with the negative electrode end of the operational amplifier A and the collector electrode of the Q1. And the drain electrode of the PM2 is electrically connected with the collector electrode of the Q2 and the positive electrode end of the operational amplifier A. The band-gap reference voltage source further comprises a high-order compensation circuit, and the high-order compensation circuit comprises a Q3 current source, an NM1 current source, an NM2 current source, an R3 current source and an ICTAT current source. The low-temperature-drift band-gap reference voltage source can enable the temperature coefficient of the band-gap reference voltage source to be smaller than 3 ppm / DEG C.

Description

technical field [0001] The invention relates to the technical field of integrated circuit design, in particular to a low-temperature drift bandgap reference voltage source. Background technique [0002] At present, the most widely used voltage reference source in the industry is the bandgap reference voltage source, which has high precision and stability, does not change with changes in power supply voltage, temperature, semiconductor process, etc., and plays an extremely important role in integrated circuit design. , Widely used in various DAC, ADC, sensor chips, detection chips, power management and other chips. [0003] The traditional bandgap reference voltage source provides reference voltage for other modules inside the integrated circuit, such as figure 1 As shown, the transistor Q 2 The voltage between the base and emitter (V BE2 ) has a negative temperature characteristic and flows through R 1B and R 2 current I PTAT2 Has a positive temperature coefficient cha...

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Problems solved by technology

Although V T has a strictly first-order linear temperature coefficient, but V BE2 The temperature coefficient of the temperature coefficient is not strict first-order linearity, but has other high-order items related to temperature, so it is difficult to achieve the temperature coefficient of the bandgap reference voltage source with this traditional structure below 10ppm / ℃

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