Three-dimensional memory and manufacturing method thereof

A manufacturing method and memory technology, applied in the direction of electric solid-state devices, semiconductor devices, electrical components, etc., can solve problems such as failure to play a supporting role, deformation and collapse of supporting structures, achieve good supporting effects, avoid insufficient support, and reduce Eclipse Difficulty Effect

Inactive Publication Date: 2020-11-17
YANGTZE MEMORY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, with the continuous advancement of semiconductor technology, after the three-dimensional memory device passes through various process environments, such as high temperature, high pressure and other environments, the formed support structure is deformed or even collapsed, so that it cannot play an effective supporting role.

Method used

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  • Three-dimensional memory and manufacturing method thereof
  • Three-dimensional memory and manufacturing method thereof
  • Three-dimensional memory and manufacturing method thereof

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Embodiment Construction

[0037] In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0038] In the following description, many specific details are set forth in order to fully understand the present invention, but the present invention can also be implemented in other ways than those described here, so the present invention is not limited by the specific embodiments disclosed below.

[0039] As indicated in this application and claims, the terms "a", "an", "an" and / or "the" do not refer to the singular and may include the plural unless the context clearly indicates an exception. Generally speaking, the terms "comprising" and "comprising" only suggest the inclusion of clearly identified steps and elements, and these steps and elements do not constitute an exclusive list, and the method or device may also contain other st...

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Abstract

The invention relates to a three-dimensional memory and a manufacturing method thereof. The three-dimensional memory comprises a substrate; a core storage area and a step area which are formed on thesubstrate, wherein the core storage area comprises a stacking structure formed on the substrate, and the step area comprises a step structure formed by the stacking structure; a grid line which penetrates through the core storage area and the step area; grooves which are located between every two adjacent grid lines, wherein the length of each groove is less than that of each grid line. The three-dimensional memory provided by the invention comprises the support structure formed by the plurality of grooves, so the problems of insufficient support, even collapse and the like caused by the defects of the deep hole structure can be avoided. The manufacturing method of the three-dimensional memory is simple in process, the etching difficulty of a higher depth-to-width ratio in the three-dimensional memory is greatly reduced, and a process window of a subsequent process is enlarged.

Description

technical field [0001] The invention relates to the manufacturing field of integrated circuits, in particular to a three-dimensional memory with a groove support structure and a manufacturing method thereof. Background technique [0002] In order to overcome the limitations of two-dimensional memory devices, memory devices with a three-dimensional (3D) structure have been developed and mass-produced in the industry, which improves integration density by three-dimensionally arranging memory cells on a substrate. As the number of 3D NAND layers continues to increase, in order to prevent the deformation or collapse of the laminated structure, some dummy channel holes will be formed in some regions of the semiconductor device as supporting structures without affecting the device performance. However, with the continuous progress of semiconductor technology, after the three-dimensional memory device passes through various process environments, such as high temperature, high press...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/11565H01L27/1157H01L27/11582
CPCH10B43/10H10B43/35H10B43/27
Inventor 周颖李明
Owner YANGTZE MEMORY TECH CO LTD
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