Check patentability & draft patents in minutes with Patsnap Eureka AI!

Trench array transistor structure and preparation method thereof

A transistor and trench technology, applied in the field of trench array transistor structures and their preparation

Pending Publication Date: 2020-11-24
CHANGXIN MEMORY TECH INC
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In order to solve the above-mentioned problems in the prior art, the present disclosure provides a trench array transistor structure and a preparation method thereof that can effectively improve the leakage current problem

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Trench array transistor structure and preparation method thereof
  • Trench array transistor structure and preparation method thereof
  • Trench array transistor structure and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0059] Example embodiments will now be described more fully with reference to the accompanying drawings. Example embodiments may, however, be embodied in many forms and should not be construed as limited to the examples set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete and will fully convey the concept of example embodiments to those skilled in the art. The drawings are merely schematic illustrations of the present disclosure and are not necessarily drawn to scale. The same reference numerals in the drawings denote the same or similar parts, and thus repeated descriptions thereof will be omitted.

[0060]In addition, the terms "first", "second", and "third" are used for descriptive purposes only, and cannot be interpreted as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, a feature defined as "first", "second" and "third" may explicitly or ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention provides a trench array transistor structure and a preparation method thereof, and relates to the technical field of integrated circuit manufacturing. The trench array transistor structure comprises a substrate, a trench and a gate oxide layer. The substrate is provided with an active region, and a source electrode and a drain electrode are arranged in the active region. The trench is located in the substrate, penetrates through the active region and comprises a bottom, a side wall, a first extension portion and a second extension portion, the first extension portion is located on the side, close to the source electrode, of the upper portion of the side wall, and the second extension portion is located on the side, close to the drain electrode, of the upper portion of the side wall. A gate oxide layer covers the bottom, the sidewall, the first extension portion, and the second extension portion of the trench. According to the technical scheme provided by the invention, the problem that the trench array transistor is easy to generate leakage current can be effectively improved.

Description

technical field [0001] The present disclosure relates to the technical field of integrated circuit manufacturing, in particular to a trench array transistor structure and a manufacturing method thereof. Background technique [0002] At present, transistors are widely used in memory, registers, and integrated circuits. With the development of manufacturing technologies for various devices, the size becomes smaller and smaller, which causes the short channel effect of transistors. A recess channel array transistor (RCAT) has a small channel length, which can reduce short channel effects, and has been widely used in recent years. [0003] However, when the size of trench channel array transistors is continuously reduced, the distance between the source and drain on both sides of the trench is continuously reduced, and the gate-induced drain leakage current (GIDL, gate- induced drainleakage), in these leakage currents, when the device in the integrated circuit is in the off sta...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L29/78H01L21/336H01L29/423H01L29/06
CPCH01L29/78H01L29/66477H01L29/4236H01L29/0603H01L29/0684
Inventor 杨正杰
Owner CHANGXIN MEMORY TECH INC
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com