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IGBT module state monitoring method and device

A state monitoring and module technology, applied in the direction of measuring devices, instruments, measuring electronics, etc., can solve the problems of machine and system shutdown, high-power IGBT module process complexity, high cost, etc., and achieve the effect of improving work reliability

Pending Publication Date: 2020-11-27
SUNGROW POWER SUPPLY CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The process of high-power IGBT modules is complicated and the cost is high. In order to save costs, the existing technology usually combines multiple low-power IGBT modules in parallel to obtain an IGBT module, which can be equivalent to a high-power IGBT module.
However, in the process of parallel operation, if individual IGBT modules work abnormally, it may cause overcurrent damage to other IGBT modules in the entire IGBT module, which will lead to machine and system shutdown, making it impossible to perform relevant maintenance and health management in advance, and increase maintenance costs. and downtime

Method used

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  • IGBT module state monitoring method and device
  • IGBT module state monitoring method and device
  • IGBT module state monitoring method and device

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Embodiment Construction

[0034] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0035] see figure 1 , the embodiment of the present invention discloses a method for monitoring the state of an IGBT module, including:

[0036] Step S01: Determine whether the IGBT module is in a conduction state, if yes, go to step S02; if not, go back to step S01.

[0037] Specifically, each IGBT module in the IGBT module group is connected in parallel, and each IGBT module is always in the on state or in the off state at the same time. Each IGBT module i...

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Abstract

The invention discloses an IGBT module state monitoring method and device. The working reliability of an IGBT module is improved. The method comprises the following steps: judging whether an IGBT module is in a conducting state or not, wherein the IGBT module is formed by connecting a plurality of IGBT models in parallel; when the IGBT module is in the conducting state, sampling the voltage drop Vce of a conduction saturation tube of any IGBT model; comparing the voltage drop Vce of the conduction saturation tube of the IGBT module with the upper limit V1 of the voltage drop of the conductionsaturation tube during normal work and the desaturation threshold voltage V2 during short circuit, and V1 being lower than V2; if V1 < Vce < V2, sending out an early warning signal; and if Vce is greater than or equal to V2, carrying out wave sealing protection on each IGBT module.

Description

technical field [0001] The invention relates to the technical field of power electronics, and more specifically, to a method and device for monitoring the state of an IGBT module. Background technique [0002] The IGBT module is a modular semiconductor product composed of IGBT (Insulated Gate Bipolar Transistor, insulated gate bipolar transistor) and freewheeling diode chip through a specific circuit bridge package. It has the characteristics of energy saving, convenient installation and maintenance, and stable heat dissipation. [0003] The process of high-power IGBT modules is complicated and the cost is high. In order to save costs, in the prior art, multiple low-power IGBT modules are usually combined in parallel to obtain an IGBT module, which can be equivalent to a high-power IGBT module. However, in the process of parallel operation, if individual IGBT modules work abnormally, it may cause overcurrent damage to other IGBT modules in the entire IGBT module, which will ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01R31/26
CPCG01R31/261G01R31/2619
Inventor 常仁贺赵安徐君郭艳双
Owner SUNGROW POWER SUPPLY CO LTD