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Precursor compound for atomic layer deposition (ALD) or chemical vapor deposition (CVD), and ald/cvd method using same

A compound and precursor technology, applied in the field of ALD/CVD process using it, can solve the problem of low film density and achieve the effect of high reactivity and excellent step coverage

Active Publication Date: 2020-12-01
韩松化学股份有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Regarding studies on non-flammable precursor compounds including aluminum (Al) as a trivalent transition metal of Group 13, in the literature [Plasma-enhanced and thermal atomic layer deposition of Al 2 o 3 using dimethylaluminum isopropoxide, [Al(CH 3 ) 2 (μ-O i Pr)] 2 , as an alternative aluminum precursor (J.Vac.Sci.Technol.A, 2012,30(2), 021505-1)] discloses the preparation of [Al(CH 3 ) 2 (μ-O i Pr)] 2 (DMAI, i Pr = isopropyl) method, but because Al after the ALD process 2 o 3 The density of the film is low, so there is a problem

Method used

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  • Precursor compound for atomic layer deposition (ALD) or chemical vapor deposition (CVD), and ald/cvd method using same
  • Precursor compound for atomic layer deposition (ALD) or chemical vapor deposition (CVD), and ald/cvd method using same
  • Precursor compound for atomic layer deposition (ALD) or chemical vapor deposition (CVD), and ald/cvd method using same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0063] [Example 1] Al(CH 3 ) 2 [CH 3 OC(CH 3 ) 2 CH 2 Preparation of NtBu]

[0064] At -78°C, 1 equivalent of the ligand CH 3 OC(CH 3 ) 2 CH 2 NtBu added to 1 equivalent of 2M Al(Me) in hexane or heptane 3 , after which the temperature was slowly raised to room temperature and stirring was carried out for about 16 hours. The reaction was terminated and the solvent was removed in vacuo. The compound thus obtained was subjected to vacuum distillation, resulting in a colorless liquid precursor Al(CH 3 ) 2 [CH 3 OC(CH 3 ) 2 CH 2 NtBu]. 1 H NMR (C 6 D. 6 ):δ2.75(Al(CH 3 ) 2 [CH 3 OC(CH 3 ) 2 CH 2 NtBu],s,2H),2.63(Al(CH 3 ) 2 [CH 3 OC(CH 3 ) 2 CH 2 NtBu],s,3H),1.28Al(CH 3 ) 2 [CH 3 OC(CH 3 ) 2 CH 2 NtBu],s,9H),0.83(Al(CH 3 ) 2 [CH 3 OC(CH 3 ) 2 CH 2 NtBu],s,6H),-0.43(Al(CH 3 ) 2 [CH 3 OC(CH 3 ) 2 CH 2 NtBu],s,6H).

Embodiment 2

[0065] [Example 2] Al(CH 3 ) 2 [CH 3 OCH (CH 3 )CH 2 Preparation of NtBu]

[0066] At -78°C, 1 equivalent of the ligand CH 3 OCH (CH 3 )CH 2 NtBu added to 1 equivalent of 2M Al(Me) in hexane or heptane 3, after which the temperature was slowly raised to room temperature and stirring was carried out for about 16 hours. The reaction was terminated and the solvent was removed in vacuo. The compound thus obtained was subjected to vacuum distillation, resulting in a colorless liquid precursor Al(CH 3 ) 2 [CH 3 OCH (CH 3 )CH 2 NtBu]. 1 H NMR (C 6 D. 6 ):δ3.40-3.32(Al(CH 3 ) 2 [CH 3 OCH (CH 3 )CH 2 NtBu],m,1H),2.88(Al(CH 3 ) 2 [CH 3 OCH (CH 3 )CH 2 NtBu],dd,J 1 =11.1Hz,J 2 =4.7Hz,1H),2.69-2.65(Al(CH 3 ) 2 [CH 3 OCH (CH 3 )CH 2 NtBu],m,1H),2.66(Al(CH 3 ) 2 [CH 3 OCH (CH 3 )CH 2 NtBu],s,3H),1.29(Al(CH 3 ) 2 [CH 3 OCH (CH 3 )CH 2 NtBu],s,9H),0.68(Al(CH 3 ) 2 [CH 3 OCH (CH 3 )CH 2 NtBu], d, J=5.8Hz, 3H), -0.40(Al(CH 3 ) 2 [CH 3 OCH (CH ...

Embodiment 3

[0067] [Example 3] Al(CH 3 ) 2 [CH 3 OCH 2 CH 2 Preparation of NtBu]

[0068] At -78°C, 1 equivalent of the ligand CH 3 OCH 2 CH 2 NHtBu added to 1 equivalent of 2MAl(Me) in hexane or heptane 3 , after which the temperature was slowly raised to room temperature and stirring was carried out for about 16 hours. The reaction was terminated and the solvent was removed in vacuo. The compound thus obtained was subjected to vacuum distillation, resulting in a colorless liquid precursor Al(CH 3 ) 2 [CH 3 OCH 2 CH 2 NtBu]. 1 H NMR (C 6 D. 6 ):δ3.09(Al(CH 3 ) 2 [CH 3 OCH 2 CH 2 NtBu], t, J=6.9Hz, 2H), 2.79(Al(CH 3 ) 2 [CH 3 OCH 2 CH 2 NtBu], t, J=6.9Hz, 2H), 2.62(Al(CH 3 ) 2 [CH 3 OCH 2 CH 2 NtBu],s,3H),1.28(Al(CH 3 ) 2 [CH 3 OCH 2 CH 2 NtBu],s,9H),-0.44(Al(CH 3 ) 2 [CH 3 OCH 2 CH 2 NtBu],s,6H).

[0069] Here, when M (transition metal) is Zn (zinc), the synthesis process is shown in Scheme 3 below.

[0070] [Option 3]

[0071]

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Abstract

The present invention relates to a precursor compound and, more specifically, to: a nonpyrophoric precursor compound usable for thin film deposition through atomic layer deposition (ALD) or chemical vapor deposition (CVD); and an ALD / CVD method using same.

Description

technical field [0001] The present invention relates to novel precursor compounds and more particularly to nonpyrophoric precursor compounds, and to ALD / CVD processes using them, by atomic layer deposition (ALD) and chemical Vapor deposition (CVD) is capable of depositing thin films. Background technique [0002] From the perspective of solving the problems of organic electronic devices, such as preventing the corrosion of metal materials due to moisture and creating a moisture barrier, the use of ALD / CVD processes to fabricate Al 2 o 3 Thin-film technology is considered important and also has applications for interlayer insulators and solar cell passivation. [0003] Al 2 o 3 The formation of thin films requires deposition processes at low deposition temperatures, specifically, temperatures below room temperature, and TMA[Al(CH 3 ) 3 ] are mainly used for the fabrication of Al using existing ALD / CVD processes 2 o 3 film precursors. Here, TMA has an ideal ALD film d...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C07F5/06C07F3/06C23C16/40C23C16/34C23C16/18C23C16/455
CPCC07F3/06C07F5/06C23C16/18C23C16/34C23C16/40C07F5/00H01L21/0228H01L21/02178C23C16/45553C07F5/062C23C16/45527
Inventor 黄贞云文基宁李珠源廉圭玄昔壮衒朴正佑
Owner 韩松化学股份有限公司