M12 large-size silicon wafer cutting method

A silicon wafer cutting, large-size technology, used in manufacturing tools, stone processing equipment, fine working devices, etc., can solve the problem of not being able to meet the requirements of M12 large-size wafer cutting

Active Publication Date: 2020-12-04
阜宁协鑫光伏科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Based on this, it is necessary to address the problem that the traditional cutting method cannot meet the cutting requirements of M12 large-size silicon wafers, and propose a cutting method for M12 large-size silicon wafers

Method used

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  • M12 large-size silicon wafer cutting method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0048] The diamond wire reciprocates, the one-way cycle length is 1600m, and the diamond wire speed is 35m / s. The initial feed speed of the table is 1mm / min; the feed speed of the table within the range of 0mm~30mm cutting depth is 1.2mm / min; the feed speed of the table within the range of 30mm~90mm cutting depth is 2.9mm / min; 90mm The feed speed of the table within the range of 180mm cutting depth is 2.7mm / min; the feed speed of the table within the range of 180mm~218mm cutting depth is 0.1~2.3mm / min. The cutting fluid temperature is 19°C. Cutting under the above parameter conditions, there is basically no disconnection. In addition, the TTV value of the silicon wafer is ≤25um, which meets the index requirements of the TTV value ≤30um.

Embodiment 2

[0050] The diamond wire reciprocates, the one-way cycle length is 1850m, and the diamond wire speed is 38m / s. The initial feed speed of the table is 1mm / min; the feed speed of the table within the range of 0mm~30mm cutting depth is 1.8mm / min; the feed speed of the table within the range of 30mm~90mm cutting depth is 2.95mm / min; 90mm The feed speed of the table within the range of ~180mm cutting depth is 2.62mm / min; the feed speed of the table within the range of 180mm~2180mm cutting depth is 0.1~2.2mm / min. The cutting fluid temperature is 20°C. Cutting under the above parameter conditions, there is basically no disconnection. In addition, the TTV value of the silicon wafer is ≤27um, which meets the index requirements of the TTV value ≤30um.

Embodiment 3

[0052] The diamond wire reciprocates, the one-way cycle length is 2000m, and the diamond wire speed is 40m / s. The initial feed speed of the table is 1mm / min; the feed speed of the table within the range of 0mm~30mm cutting depth is 2.2mm / min; the feed speed of the table within the range of 30mm~90mm cutting depth is 3mm / min; The feed speed of the table within the range of 180mm cutting depth is 2.7mm / min; the feed speed of the table within the range of 180mm~218mm cutting depth is 0.1~2.15mm / min. The cutting fluid temperature is 21°C. Cutting under the above parameter conditions, there is basically no disconnection. In addition, the TTV value of the silicon wafer is ≤29um, which meets the index requirements of the TTV value ≤30um.

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Abstract

The invention relates to an M12 large-size silicon wafer cutting method. The method comprises the following steps that a workbench performs feeding to drive a silicon block to move towards a diamond wire, the silicon block is cut from the position of 0 mm by utilizing a reciprocating diamond wire, a single-way cycle length of the diamond wire is 1600 m-2000 m, a feeding speed of the workbench is within a cutting depth range of 30 mm-90 mm is larger than a feeding speed of the workbench within other cutting depth ranges. The single-way cycle length of the diamond wire is 1600 m-2000 m each time, compared with the prior art, in a single-way cycle process, a cutting depth of the silicon block cut by the diamond wire is greatly increased, the number of reversing times needed for cutting through the silicon block is small, a fatigue strength of the diamond wire is reduced, cutting off wires and TTV abnormity are reduced, the feeding speed of the workbench in the cutting depth range of 30 mm-90 mm in an early cutting stage is larger than the feeding speed in other cutting depth ranges, and a wire bow in a later cutting stage is reduced while the overall cutting speed is guaranteed.

Description

technical field [0001] The invention relates to the field of multi-wire cutting of silicon wafers, in particular to a method for cutting M12 large-size silicon wafers. Background technique [0002] In the field of photovoltaics, when the size of silicon wafers increases, the power of a single cell module can be increased, and the cost of components such as brackets and combiner boxes required by the power station can be reduced. Therefore, M12 (side length 210mm, diagonal length 295mm) Large-size silicon wafers are gradually becoming a trend. However, for large-size silicon wafers, the difficulty of cutting will increase significantly. The existing silicon wafer cutting methods cannot be well adapted to the cutting of M12 silicon wafers. The main reasons include: due to the increase in the cutting area of ​​silicon wafers, the existing The diamond wire wear degree and the heat generated by the silicon wafer cutting method are greatly increased, and the wire bow is seriously...

Claims

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Application Information

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IPC IPC(8): B28D5/04
CPCB28D5/045
Inventor 史存振周文广
Owner 阜宁协鑫光伏科技有限公司
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