Variable retention time mode analysis method, apparatus and device, and readable storage medium
A retention time and mode analysis technology, applied in static memory, instrument, etc., can solve problems such as failure of retention time, variable retention time mode analysis without memory, short duration of failure state, etc.
Active Publication Date: 2020-12-04
CHANGXIN MEMORY TECH INC
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Problems solved by technology
In general, the duration of the passing state is long, and the duration of the failure state is short, but the failure state of any storage unit may cause the failure of the retention time
[0004] Existing memory variable retention time determination methods (such as figure 2 shown) is often performed multiple times for a specific memory cell, but currently there is no method for analyzing the variable retention mode of the memory
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[0041] An example embodiment will now be described more fully with reference to the accompanying drawings. However, an example embodiment can be implemented in a variety of forms and is not to be construed as being limited to the examples set forth herein; in contrast, the present invention will make the present invention will be more comprehensive and complete, and the concept of example embodiments is fully conveyed A technician to those skilled in the art. The drawings are only a schematic illustration of the present invention, and is not necessarily drawn. The same reference numerals in the figures represent the same or similar portions, and thus the repeated description thereof will be omitted.
[0042] Further, the features, structures, or characteristics described may be incorporated in one or more embodiments in any suitable manner. In the following description, there is provided a number of specific details to give a sufficient understanding of the embodiments of the pres...
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The invention discloses a variable retention time mode analysis method, device and equipment and a readable storage medium. The method comprises the following steps: sequentially carrying out retention time test of preset test times on each storage unit in the memory; for each storage unit, converting each test result in each retention time test into a variable retention time image of the corresponding storage unit; and classifying the variable retention time image of each storage unit through a mode identification method to obtain the mode type of the variable retention time of each storage unit. According to the variable retention time mode analysis method provided by the invention, the change characteristics of the variable retention time of each storage unit relative to the test timescan be accurately determined, and meanwhile, the existing modes of the variable retention time of all the storage units on the whole memory can be effectively reflected.
Description
Technical field [0001] The present invention relates to the field memory test, particularly, it relates to a variable holding time of analysis method, apparatus, and equipment-readable storage medium. Background technique [0002] For volatile memory such as dynamic random access memory (DRAM), such as figure 1 , The memory cell 40 consists of a transistor 402 and a capacitor 404 composed of, wherein the switching voltage VPP on the word line (WL) of the control transistor 402. When the memory cell transistor 402 is turned on, the memory cell voltage VBL on the bit line (BL) of the memory cell capacitor 404 is charging; when the memory cell transistor 402 is turned off, the capacitor 404 will drain over time. Retention time of the memory capacitor 404 is a predetermined time after the leakage, can maintain the level of the original signal, without causing the effective time of data reading failure. [0003] Deviation in the manufacturing process will process memory, resulting in ...
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Login to View More IPC IPC(8): G11C29/50
CPCG11C29/50G11C29/50016
Inventor 杨正杰王伟洲
Owner CHANGXIN MEMORY TECH INC