Faraday cup assembly, ion implantation device and use method thereof

An ion implantation device, Faraday cup technology, applied in electrical components, discharge tubes, circuits, etc., can solve the problems of inaccurate current measured by Faraday cup, wafer electrical deviation, affecting product yield, etc., to avoid frequent replacement. , Prevent too thin or puncture, prolong the service life

Pending Publication Date: 2020-12-08
CHANGXIN MEMORY TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] However, if the ion beam hits the same area of ​​the Faraday cup for a long time, the area will be thinned or even pierced, making the current measured by the Faraday cup inaccurate, resulting in deviations in the electrical properties of the wafer, and affecting product yield.
Higher cost if frequent inspection and replacement of Faraday cups

Method used

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  • Faraday cup assembly, ion implantation device and use method thereof
  • Faraday cup assembly, ion implantation device and use method thereof
  • Faraday cup assembly, ion implantation device and use method thereof

Examples

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Embodiment Construction

[0045] Example embodiments will now be described more fully with reference to the accompanying drawings. Example embodiments may, however, be embodied in many forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of example embodiments to those skilled in the art. The same reference numerals in the drawings denote the same or similar structures, and thus their detailed descriptions will be omitted. Furthermore, the drawings are merely schematic illustrations of the present disclosure and are not necessarily drawn to scale.

[0046] Although relative terms such as "upper" and "lower" are used in this specification to describe the relative relationship of one component of an icon to another component, these terms are used in this specification only for convenience, for example, according to the description in the accompanyin...

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PUM

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Abstract

The invention provides a Faraday cup assembly, an ion implantation device and a using method thereof, and relates to the technical field of semiconductors. The Faraday cup assembly comprises a base, aFaraday cup, a protection ring and a plurality of connecting pieces. The base is provided with a mounting surface provided with a mounting groove, and the bottom surface of the mounting groove is provided with at least one mounting hole; the Faraday cup is annular and is arranged on the bottom surface of the mounting groove, the Faraday cup is provided with an annular cup cavity extending in thecircumferential direction, the cup cavity is provided with an open end facing the top of the mounting groove, and a plurality of fixing holes evenly distributed in the circumferential direction are formed in the bottom of the cup cavity; the protection ring is arranged on the mounting surface and shields the mounting groove, the projection of the protection ring at the open end covers the cup cavity, the protection ring is provided with a plurality of arc-shaped slits distributed in the circumferential direction, and the slits and the fixing holes meet the following conditions that n is the number of the slits, c is the perimeter of the circumference where the slits are located, L is the arc length of the slits, and m is the number of the fixing holes. The connecting piece is detachably connected to the mounting hole and penetrates through the fixing hole right opposite to the mounting hole.

Description

technical field [0001] The present disclosure relates to the technical field of semiconductors, in particular, to a Faraday cup assembly, an ion implantation device, and a method for using the ion implantation device. Background technique [0002] In the field of semiconductors, ion implantation technology is widely used, which can introduce impurities that change conductivity into wafers to improve product performance. At present, ion implantation equipment is usually used to generate ion beams and bombard wafers. In order to detect the incident intensity of ions, the ion beam is generally introduced into a Faraday cup, and the current change is detected through the Faraday cup to determine the incident intensity of the ion beam. . [0003] However, if the ion beam hits the same area of ​​the Faraday cup for a long time, the area will be thinned or even penetrated, making the current measured by the Faraday cup inaccurate, resulting in deviations in the electrical properti...

Claims

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Application Information

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IPC IPC(8): H01J37/244H01J37/317
CPCH01J37/244H01J37/3171
Inventor 王东
Owner CHANGXIN MEMORY TECH INC
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