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Substrate table and method for adjusting stability of microwave plasma ball

A microwave plasma and plasma technology, which is applied to discharge tubes, electrical components, circuits, etc., can solve the problem of difficulty in adjusting metal baffles, and achieve the effect of improving stability

Active Publication Date: 2020-12-18
SHANGHAI ZHENGSHI TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

And once this kind of C is discharged, it is difficult to eliminate it by adjusting the metal baffle and three screws

Method used

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  • Substrate table and method for adjusting stability of microwave plasma ball
  • Substrate table and method for adjusting stability of microwave plasma ball

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0016] Place a monocrystalline silicon wafer with a diameter of 50mm and a thickness of 8.0mm on the substrate table, adjust the positions of the three screws and the metal baffle, and the vacuum system will reduce the pressure in the vacuum chamber to 0.6KPa, and then inject H 2 , H 2 The flow rate is 100sccm (sccm: standard cubic centimeter per minute); the microwave source is turned on, and the microwave input is gradually increased from 500W. When the microwave input power reaches 800W, plasma is generated on the surface of the silicon wafer. Within 5 minutes, the air pressure in the vacuum chamber was increased from 0.6KPa to 4.0KPa, and the microwave power was gradually increased from 500W to 2.0KW. It can be seen that the plasma ball is stably suspended on the upper surface of the silicon substrate material. It shows that the plasma is stable at this time. Then turn off the microwave system, and take out the absorbent cotton after the silicon substrate material is full...

Embodiment 2

[0018] Fix the adjusted metal baffle and the three-screw adjuster in Example 1, replace the silicon substrate material in Example 1 with metal tungsten of the same size, and keep other conditions unchanged. The vacuum system reduces the air pressure in the vacuum chamber to 0.6KPa, and then injects H 2 , H 2 The flow rate is 100sccm; the microwave source is turned on, and the microwave input is gradually increased from 500W. When the microwave input power reaches 900W, plasma is generated on the surface of metal tungsten. Within 5 minutes, the air pressure in the vacuum chamber was increased from 0.6KPa to 4.0KPa, and the microwave power was gradually increased from 500W to 2.0KW. It can be seen that the plasma ball is stably suspended on the upper surface of the silicon substrate material. It shows that the plasma is stable at this time. Then turn off the microwave system, and take out the absorbent cotton after the tungsten substrate material is fully cooled. It is found t...

Embodiment 3

[0020] Fix the adjusted metal baffle and the three-screw adjuster in Example 1. Replace the silicon substrate material in Example 1 with metal tungsten of the same size, and place a metal reflective ring on the metal baffle. The metal reflective ring The specific dimensions are: inner diameter 15.1 mm; outer diameter 50.0 mm; height 15.0 mm; a complete metal ring formed by merging two symmetrical half rings around the metal support of the substrate table, made of stainless steel. Other conditions remain unchanged. The vacuum system reduces the air pressure in the vacuum chamber to 0.6KPa, and then injects H 2 , H 2 The flow rate is 100sccm; the microwave source is turned on, and the microwave input is gradually increased from 500W. When the microwave input power reaches 820W, plasma is generated on the surface of metal tungsten. Within 5 minutes, the air pressure in the vacuum chamber was increased from 0.6KPa to 4.0KPa, and the microwave power was gradually increased from 5...

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Abstract

The invention provides a substrate table which is arranged at the center in an axisymmetric microwave plasma (MPCVD) cylindrical vacuum cavity, the substrate table is supported by a metal bracket, anda detachable metal reflection ring is arranged at the lower part of the substrate table. The invention aims to adjust the distribution of a microwave field in a vacuum cavity according to the material property and quantity of a substrate material on the substrate table, so that microwave-excited plasma is prevented from appearing at the bottom of the substrate table, and the stability of the microwave-excited plasma in a reaction cavity on the substrate table can be improved.

Description

technical field [0001] The invention belongs to the technical field of vacuum microelectronics, and in particular relates to a method for improving the stability of a microwave-excited plasma ball by adding a metal reflection ring. Background technique [0002] Microwave plasma chemical vapor deposition (abbreviated as MPCVD) is a commonly used method for preparing materials. Especially in the preparation of the diamond film, the principle is to use microwave energy to excite the reactive gas into a plasma state, and deposit the diamond film on the substrate stage in the central area of ​​the vacuum chamber. Because the plasma is excited by microwave energy and the plasma is pure, the microwave plasma CVD method is the preferred method for preparing diamond films with high quality, large area and high speed. The general working principle is to pass the reaction gas into an axisymmetric cylindrical vacuum cavity, and transmit the microwave generated by the microwave generato...

Claims

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Application Information

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IPC IPC(8): H01J37/20
CPCH01J37/20H01J2237/20H01J2237/2006
Inventor 满卫东龚闯朱长征吴剑波
Owner SHANGHAI ZHENGSHI TECH CO LTD
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