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Nucleation layer deposition method

A technology of crystal nucleus layer and buffer layer, applied in the field where gaseous raw materials are additionally input into the processing chamber, can solve problems such as damage to the properties of components

Active Publication Date: 2020-12-25
AIXTRON AG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This phenomenon of increased conductivity in the interface between the seed layer and the substrate strongly impairs the properties of the component at higher switching frequencies due to diffusion and attenuation

Method used

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  • Nucleation layer deposition method
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  • Nucleation layer deposition method

Examples

Experimental program
Comparison scheme
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Embodiment Construction

[0020] figure 1 A schematic structural view of a HEMT (High Electron Mobility Transistor) is shown, in which a crystal nucleus layer 3 is deposited on a surface 2 of a silicon substrate 1 . Before depositing the seed layer 3, the surface 2 of the silicon substrate 1 is prepared in a suitable manner. For this purpose, the silicon substrate 1 is arranged in a process chamber 8 of a CVD reactor 7 . The treatment chamber is heated to 900 to 1200° C. in a hydrogen atmosphere at a typical total pressure of between 50 and 800 mbar. In the preliminary stage, the native SiO of the substrate 2 Layers are thermally removed. Subsequently, at lower or higher temperatures and at other pressures using, for example, TMAl (trimethylaluminum) or NH 3 Optional additional pretreatment of the substrate is carried out under varying pressures of the substrate or other gaseous feedstock.

[0021] Autonomous epitaxial application of AlN nucleus layer 3 by introducing TMAl and NH 3 accomplish. T...

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Abstract

The invention relates to a method for depositing a nucleation layer (3) comprised of elements of the main groups III and V directly onto the surface (2) of a substrate (1) made of an element of the main group IV, wherein together with a first gaseous starting material containing the element of the main group III, a second gaseous starting material containing the element of the main group V is introduced at a process temperature of greater than 500 DEG C into a process chamber (8) containing the substrate (1). It is essential that at least at the start of the deposition process, a third gaseousstarting material containing an element of the main group IV is fed into the process chamber (8), together with the first and second gaseous starting material, which third gaseous starting material develops an n-doping effect in the deposited III-V crystal, wherein a damping decrease is achieved at a dopant concentration of <1*1018cm-1.

Description

technical field [0001] The present invention relates to a method for depositing a crystal nucleus layer directly on the surface of a substrate, said nucleus layer consisting of elements of main group III and group V, said substrate consisting of elements of main group IV, wherein, together with The first gaseous feedstock containing Group III elements together with the second gaseous feedstock containing Group V elements are introduced into a processing chamber containing a substrate at a processing temperature greater than 500°C. At least when the deposition of the nucleus layer is started, a gaseous starting material containing elements of main group V is additionally fed into the treatment chamber, which gaseous starting material effects doping in the layer. [0002] Furthermore, the invention relates to layer sequences, in particular HFET transistors (heterojunction field effect transistors), produced according to the method. Background technique [0003] A method of th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B25/16C30B25/18C30B29/40H01L21/00C23C16/00
CPCC30B25/165C30B25/183C30B29/403H01L29/66462H01L29/7786H01L29/2003H01L21/0262H01L21/02576H01L21/0254H01L21/02458H01L21/02381H01L21/02661C23C16/303C23C16/0218H01L21/02502H01L29/205H01L29/207
Inventor C.M.莫德
Owner AIXTRON AG