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Semiconductor light emitting diode and preparation method thereof

A technology of light-emitting diodes and semiconductors, which is applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of easy peeling of the reflective layer, poor coverage, etc., and achieve the effect of improving the covering performance and preventing peeling problems

Active Publication Date: 2021-01-08
XIAMEN SANAN OPTOELECTRONICS CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The problem to be solved by the present invention is to provide a semiconductor light-emitting diode and its preparation method, so that the situation of easy peeling and poor coverage of the internal reflection layer of the semiconductor light-emitting diode is improved, and the performance is improved.

Method used

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  • Semiconductor light emitting diode and preparation method thereof
  • Semiconductor light emitting diode and preparation method thereof
  • Semiconductor light emitting diode and preparation method thereof

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Embodiment Construction

[0038] In the existing semiconductor light-emitting diodes, the end of the reflective layer is prone to roll-up abnormality, resulting in problems such as peeling off and poor coverage. For this reason, the present invention provides a new semiconductor light-emitting diode and its preparation method to solve the corresponding disadvantages.

[0039] For a clearer representation, the present invention will be described in detail below in conjunction with the accompanying drawings.

[0040] Please refer to figure 1, an embodiment of the present invention provides a semiconductor light emitting diode, including a semiconductor light emitting stack (not marked) on a substrate 100, the semiconductor light emitting stack includes a first conductivity type semiconductor layer 110 on the substrate 100, located on the first The quantum well layer 120 on the conductive type semiconductor layer 110 , and the second conductive type semiconductor layer 130 on the quantum well layer 120 ....

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Abstract

The invention discloses a semiconductor light-emitting diode and a preparation method thereof. The semiconductor light-emitting diode comprises a semiconductor light-emitting laminated layer located on a substrate, a transparent conducting layer is arranged on the semiconductor light-emitting laminated layer, and a reflecting layer is arranged on the transparent conducting layer; and the semiconductor light-emitting diode further comprises an insulating structure, at least part of the insulating structure is located on the transparent conducting layer, the insulating structure is provided withan inclined side face, the inclined side face of the insulating structure surrounds the edge of the upper surface of the transparent conducting layer, and the side face of the reflecting layer coversthe inclined side face of the insulating structure. The reflection layer in the semiconductor light emitting diode is not easy to peel off.

Description

technical field [0001] The invention relates to the technical field of semiconductor solid lighting, in particular to a semiconductor light emitting diode and a preparation method thereof. Background technique [0002] Commercialized semiconductor light-emitting diode (LED) packaging, at the beginning, mostly uses a front-mount packaging structure in which the PN junction of the chip is connected to the positive and negative poles of the support with gold wires. However, there are failure problems such as large light attenuation, light quenching and heat dissipation in the formal structure, which restricts its development. For this reason, researchers in the industry have successively developed vertical-structure semiconductor light-emitting diodes and flip-chip semiconductor light-emitting diodes. [0003] Compared with the formal semiconductor light emitting diode, the vertical semiconductor light emitting diode structure can improve the heat dissipation efficiency. For ...

Claims

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Application Information

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IPC IPC(8): H01L33/44H01L33/46H01L33/00
CPCH01L33/44H01L33/46H01L33/0062H01L2933/0025H01L33/24H01L33/42H01L2933/0016H01L2933/0058H01L33/20H01L33/405
Inventor 刘小亮朱秀山黄敏郑高林何安和彭康伟林素慧
Owner XIAMEN SANAN OPTOELECTRONICS CO LTD
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