A carbon/silicon carbide dual continuous phase composite material and its preparation method
A dual-continuous phase and composite material technology is applied in the field of carbon/silicon carbide dual-continuous phase composite materials and their preparation, which can solve the problems of high price, high cost, and long composite process cycle of composite materials, and achieve excellent high-temperature mechanical properties. , high Young's modulus, excellent corrosion resistance
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Examples
Embodiment l
[0032] First, 20wt% of silicon carbide powder (0.5 micron), 15wt% of silicon carbide powder (30 microns), and 65wt% of silicon carbide powder (85 microns) were used as mixtures, plus 3wt% of sodium carbonate and 4wt% of polystyrene Ethylene glycol and 3wt% sodium cellulose were mixed for 1 hour, then 25wt% of pure water was added, kneaded for 2 hours, stale for 24 hours, and vacuum muddled three times. Shaped by extrusion, dried in a microwave drying oven at 100°C for 12 hours to obtain a silicon carbide green body, placed in a sintering furnace, controlled furnace pressure 2 As diluent gas, control carbon source gas and N 2 The volume ratio of the silicon carbide body is 1:3; the surface temperature of the silicon carbide body is controlled at 1200°C, the furnace pressure is 10kPa, and the deposition time is 120 hours. That is, a carbon / silicon carbide bicontinuous phase structure composite material is obtained.
[0033] The performance test is carried out to the finished sa...
Embodiment 2
[0035] The process of this example is the same as that of Example 1, except that some process parameters are changed: CVI carbon vapor deposition, the surface temperature of the silicon carbide body is controlled at 1000° C., and the deposition time is 100 hours.
[0036] The performance test identical to embodiment 1 is carried out to the finished sample of present embodiment, the result is as follows: bulk density 2.76g / cm 3 , porosity 4.6%, apparent porosity 0.8%, Young's modulus 308GPa, 1200°C flexural strength 106MPa, thermal expansion coefficient 2.6×10 -6 / K, thermal conductivity 28W / (m K), acid and alkali resistance 1~14, thermal shock resistance tested by air quenching method, repeated thermal cycle times 46, product impurity content 0.03%.
Embodiment 3
[0038] The process of this embodiment is the same as that of Example 1, except that some process parameters have changed: the raw and auxiliary materials adopt 30wt% silicon carbide powder (0.8 micron), 20wt% silicon carbide powder (20 microns), and 50wt% silicon carbide powder (55 microns) as a mixture, plus 2wt% of sodium carbonate, 0.5wt% of polyethylene glycol and 0.5wt% of cellulose sodium to prepare a silicon carbide green body with a porosity of 26%.
[0039] The performance test identical to embodiment 1 is carried out to present embodiment finished product sample, and the result is as follows: bulk density 2.87g / cm 3 , porosity 3.1%, apparent porosity 0.6%, Young's modulus 320GPa, 1200°C flexural strength 117MPa, thermal expansion coefficient 3.5×10 -6 / K, thermal conductivity 32W / (m·K), acid and alkali resistance 1~14, thermal shock resistance tested by air quenching method, repeated thermal cycle times 55, product impurity content 0.03%.
PUM
| Property | Measurement | Unit |
|---|---|---|
| particle diameter | aaaaa | aaaaa |
| particle diameter | aaaaa | aaaaa |
| particle diameter | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
Login to View More