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A kind of small divergence angle semiconductor laser and its preparation method

A laser and semiconductor technology, used in semiconductor lasers, lasers, laser parts and other directions, can solve the problems of complex epitaxy process, reliability impact, small divergence angle of mode-spot converters, etc., and achieve high-quality results

Active Publication Date: 2021-11-30
武汉云岭光电股份有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] 1. Butt coupling growth, first grow the laser material, and then remove the laser material in the spot converter area, and select the material required for the epitaxial production of the spot converter area in the removed part. The divergence angle of the spot converter produced by this method is small , the effect is good, but multiple epitaxy is required, and the epitaxy process is complicated. At the same time, this method etches the active layer, which may have an impact on reliability;
[0004] 2. Double waveguide layer design, divided into upper active area waveguide and lower passive waveguide, the strip width of the laser active area gradually shrinks in the mode spot conversion area, and the waveguide mode of the upper active area is gradually converted to the lower passive area Waveguide, this design generally only requires one epitaxy, but the addition of the lower waveguide layer will degrade the laser performance;

Method used

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  • A kind of small divergence angle semiconductor laser and its preparation method
  • A kind of small divergence angle semiconductor laser and its preparation method
  • A kind of small divergence angle semiconductor laser and its preparation method

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preparation example Construction

[0041] The embodiment of the present invention also provides a method for manufacturing a semiconductor laser with a small divergence angle, including the following steps:

[0042] Such as figure 1 The first epitaxial growth shown includes: growing an n-type InP material buffer layer, an n-type AlInAs lower confinement layer, and an Al x Ga y In 1-x-y As lower waveguide layer, AlGaInAs / AlGaInAs strained MQW layer, Al x Ga y In 1-x-y As upper waveguide layer, P-type AlInAs upper confinement layer, part of P-type InP upper confinement layer, P-type InGaAsP mode field expansion layer, P-type InP mode field expansion layer covering layer, forming a first epitaxial structure;

[0043] The mode field expansion layer of the laser body region on the first epitaxial structure is removed by a photolithography process, and only the mode field expansion layer of the mode spot converter region on one or both sides of the light output end is reserved; the laser body region is removed ...

Embodiment 1

[0053] see image 3 , the etched morphology of the mode field expansion layer in this embodiment is rectangular, the semiconductor laser is a ridge-shaped semiconductor laser, and when the ridge waveguide is fabricated, the entire ridge waveguide is in the shape of a strip.

[0054] The rectangular mode field expansion layer includes the part of the ridge waveguide located in the region of the mode spot converter.

Embodiment 2

[0056] see Figure 4 , the etched morphology of the mode field expansion layer in this embodiment is a patchwork shape of a rectangle and a trapezoid, the ridge waveguide of the semiconductor laser is a strip shape in the laser body area, and it is also a patchwork of a rectangle and a trapezoid in the spot converter area Shape, in the patchwork shape of rectangle and trapezoid, the long side of the rectangle coincides with the bottom of the trapezoid and is equal in length, the lower bottom of the trapezoid is on the outside, and the upper bottom of the trapezoid is on the inside; the ridge waveguide includes the mode field expansion layer inside. The adoption of the above solution makes the mode field expansion layer gradually increase in the horizontal direction, and the mode field also gradually increases, thereby reducing the loss.

[0057] Such as Figure 4 As shown, the width of the ridge waveguide is slightly larger than the width of the mode field expansion layer, an...

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Abstract

The invention relates to a semiconductor laser with a small divergence angle and a preparation method thereof. The semiconductor laser with a small divergence angle includes a semiconductor laser body and a spot converter arranged on one side or both sides of the light output end of the semiconductor laser body. A mode field expansion layer is provided, the mode field expansion layer is arranged above the active layer, the laser body and the mode spot converter have the same active layer, the mode field expansion layer is only arranged in the mode field converter area, and the mode field expansion The layer expands the laser mode, thereby reducing the divergence angle. The small divergence angle semiconductor laser is only provided with a mode field expansion layer in the area of ​​the mode spot converter, and the mode field expansion layer is provided above the active layer, and the active layer is not etched, which has little influence on the performance of the laser. A small divergence angle is obtained below.

Description

technical field [0001] The invention belongs to the technical field of semiconductor lasers, and in particular relates to a semiconductor laser with a small divergence angle and a preparation method thereof. Background technique [0002] The mode spot converter can expand the output mode of the semiconductor laser, reduce the divergence angle, and improve the coupling efficiency with the optical fiber. Common production methods include: [0003] 1. Butt coupling growth, first grow the laser material, and then remove the laser material in the spot converter area, and select the material required for the epitaxial production of the spot converter area in the removed part. The divergence angle of the spot converter produced by this method is small , the effect is good, but multiple epitaxy is required, and the epitaxy process is complicated. At the same time, this method etches the active layer, which may have an impact on reliability; [0004] 2. Double waveguide layer desig...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/10H01S5/343
CPCH01S5/1014H01S5/34313
Inventor 陈志标
Owner 武汉云岭光电股份有限公司