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Preparation method of polishing pad

A grinding pad and gasket technology, applied in the grinding field, can solve problems such as unqualified bond strength, scrapped materials, product shedding, etc., and achieve high bonding rate, consistent appearance, improved bonding rate and porosity Effect

Active Publication Date: 2021-01-19
宁波润平电子材料有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, at present, if the placement of materials is unreasonable during processing, abnormal appearance problems such as deformation and fracture will occur, or the materials will be scrapped directly. Unreasonable setting of processing parameters will lead to problems such as unqualified bond strength and product falling off.

Method used

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  • Preparation method of polishing pad

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0046] The present embodiment provides a kind of preparation method of grinding pad, and described method comprises the steps:

[0047] (1) The top layer 1 and the middle layer 2 are carried out successively by the first pressing and the first pulling to obtain the intermediate raw material; wherein, the control pulling force is 80N when the middle layer is fed; the top layer 1 is polyurethane cushion KC100; The middle layer 2 is double-sided adhesive tape 5760; the pressing pressure in the first pressing is 685N; the pressing speed in the first pressing is 1.5m / min; The temperature is 105°C; the spacer is used to adjust the spacing of the pressing rollers during pressing in the first pressing; the thickness of the gasket is 1.37mm; the pulling pressure in the first pulling is 105N; the pulling force in the first pulling is 137N;

[0048] (2) Carry out the second pressing and the second pulling successively with the intermediate raw material that step (1) obtains and bottom l...

Embodiment 2

[0051] The present embodiment provides a kind of preparation method of grinding pad, and described method comprises the steps:

[0052] (1) The top layer and the middle layer are carried out successively by the first pressing and the first pulling to obtain the intermediate raw material; wherein, the control pulling force is 65N when the middle layer is fed; the top layer is polyurethane pad KD1000; the middle layer It is double-sided adhesive tape 5760; the pressing pressure in the first pressing is 700N; the speed of pressing in the first pressing is 1m / min; the temperature in the first pressing is 110°C ; The spacer is used to adjust the spacing of the pressing rollers during the pressing in the first pressing; the thickness of the gasket is 1.45mm; the pulling pressure in the first pulling is 100N; The pulling force in the first pull is 145N;

[0053] (2) Carrying out the second pressing and the second pulling successively to the intermediate raw material obtained in step...

Embodiment 3

[0056] The present embodiment provides a kind of preparation method of grinding pad, and described method comprises the steps:

[0057] (1) The top layer and the middle layer are carried out successively by the first pressing and the first pulling to obtain the intermediate raw material; wherein, the control pulling force is 105N when the middle layer is fed; the top layer is polyurethane pad KC100; the middle layer It is 5760 double-sided adhesive tape; the pressing pressure in the first pressing is 670N; the speed of pressing in the first pressing is 2m / min; the temperature in the first pressing is 100- 110°C; spacers are used to adjust the spacing of the pressing rollers during pressing in the first pressing; the thickness of the spacers is 1.30mm; the pulling pressure in the first pulling is 110N; The pulling force of pulling in the first pulling is 130N;

[0058] (2) Carrying out the second pressing and the second pulling successively to the intermediate raw material obt...

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Abstract

The invention relates to a preparation method of a polishing pad, which comprises the following steps: (1) sequentially carrying out first lamination and first traction on a top layer and a middle layer to obtain a middle primary material; and (2) sequentially carrying out second pressing and second traction on the intermediate primary material obtained in the step (1), a bottom layer and a back adhesive layer to obtain the polishing pad. According to the method, the appearance consistency of the machined surface of the polishing pad is guaranteed in a secondary thermal bonding mode, and meanwhile it is guaranteed that the bonding strength of the product is within the qualified range.

Description

technical field [0001] The invention relates to the field of grinding, in particular to a preparation method of a grinding pad. Background technique [0002] Currently, due to technological developments in the semiconductor industry, methods for planarizing wafer surfaces are attracting more and more attention. At present, the surface of the wafer is processed by chemical mechanical polishing, and the performance of the polishing pad therein will seriously affect the final effect of the polishing. [0003] Disclosed as CN1400636 is a kind of composite grinding pad for grinding semiconductor wafers and its preparation method. First, a surface is provided to include an adhesive layer and a plurality of hard, first grinding pads of grinding material, and then part of the first grinding pads are perforated. , to remove part of the hard abrasive material on the surface of the first abrasive pad, and form a plurality of holes penetrating the first abrasive pad; then provide a sec...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B32B37/06B32B37/10B32B37/12
CPCB32B37/06B32B37/10B32B37/12
Inventor 姚力军潘杰惠宏业王学泽代宇光
Owner 宁波润平电子材料有限公司