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Preparation method of polishing pad

A technology of grinding pads and gaskets, which is applied in the field of grinding, and can solve problems such as material deformation and fracture, unqualified bond strength, and material scrapping

Active Publication Date: 2021-01-15
上海江丰平芯电子科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] But at present, if the material is placed unreasonably during the processing process, abnormal appearance problems such as deformation and fracture will occur, or the material will be scrapped directly, and the unreasonable setting of processing parameters will lead to bond strength. Unqualified, product shedding and other problems

Method used

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  • Preparation method of polishing pad

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0063] The present embodiment provides a kind of preparation method of grinding pad, and described method comprises the steps:

[0064] The method comprises the steps of:

[0065] (1) The top layer 1 and the middle layer 2 are sequentially subjected to the first pressing and the first pulling to obtain the intermediate material; wherein, the top layer 1 is polyurethane KC100; the middle layer 2 is AGKR synthetic rubber; the top layer 1 The pulling force of the control roller is 20N when feeding; the pulling force of the control roller is 10N when the intermediate layer 2 is feeding; the pressure of the first pressing is 700N; the speed of pressing in the first pressing is 1m / min; the pressing temperature of the upper roller in the first pressing is 142°C; the pressing temperature of the lower roller in the first pressing is 95°C; the first pressing is carried out under the irradiation of an infrared lamp; The strong irradiation temperature of the infrared lamp is 55°C; the p...

Embodiment 2

[0070] The present embodiment provides a kind of preparation method of grinding pad, and described method comprises the steps:

[0071] (1) Carry out the first pressing and the first drawing of the top layer and the middle layer in turn to obtain the intermediate material; wherein, the top layer is polyurethane KD1000; the middle layer is synthetic rubber AGKR; the control roller is used when feeding the top layer The pulling force of the middle layer is 10N; the pulling force of the control roller is 30N when the middle layer is fed; the pressure of the first pressing is 750N; the speed of pressing in the first pressing is 0.5m / min; The pressing temperature of the upper roller in the first pressing is 135°C; the pressing temperature of the lower roller in the first pressing is 100°C; the first pressing is carried out under the irradiation of an infrared lamp; the intensity of the infrared lamp is The irradiation temperature is 60°C; the pulling force in the first pulling is 0...

Embodiment 3

[0076] The present embodiment provides a kind of preparation method of grinding pad, and described method comprises the steps:

[0077] (1) Carry out the first pressing and the first drawing of the top layer and the middle layer in turn to obtain the intermediate material; wherein, the top layer is polyurethane KC100; the middle layer is synthetic rubber AGKR; the top layer is controlled when feeding The pulling force of the middle layer is 15N; the pulling force of the control roller is 20N when the middle layer is fed; the pressure of the first pressing is 650N; the speed of pressing in the first pressing is 1.5m / min; The pressing temperature of the upper roller in the first pressing is 150°C; the pressing temperature of the lower roller in the first pressing is 90°C; the first pressing is carried out under the irradiation of an infrared lamp; the intensity of the infrared lamp is The irradiation temperature is 50°C; the pulling force in the first pulling is 1.5N; the pullin...

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Abstract

The invention relates to a preparation method of a polishing pad, which comprises the following steps of: (1) sequentially carrying out first lamination and first traction on a top layer and a middlelayer to obtain an intermediate material; (2) sequentially carrying out second pressing and second traction on the intermediate material obtained in the step (1) to obtain an intermediate treatment material; and (3) sequentially carrying out third pressing and third traction on the intermediate treatment material obtained in the step (2), a bottom layer and a back adhesive layer to obtain the polishing pad. According to the preparation method of the polishing pad, a three-time laminating thermal bonding mode is matched with infrared lamp assisted heating to ensure that the appearance of the machined surface is consistent, and meanwhile it is ensured that the bonding strength of a product is within the qualified range.

Description

technical field [0001] The invention relates to the field of grinding, in particular to a preparation method of a grinding pad. Background technique [0002] Currently, due to technological developments in the semiconductor industry, methods for planarizing wafer surfaces are attracting more and more attention. Currently, the surface of the wafer is treated by chemical mechanical polishing, and the performance of the polishing pad will seriously affect the final effect of the polishing. [0003] As CN1400636 discloses a kind of composite polishing pad for grinding semiconductor wafers and its manufacturing method, first provide a surface that includes an adhesive layer and a plurality of hard, first polishing pads of abrasive material, and then part of the first polishing pad Drilling holes to remove part of the hard abrasive material on the surface of the first grinding pad, and forming a plurality of holes penetrating the first grinding pad; then providing a surface compr...

Claims

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Application Information

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IPC IPC(8): B32B37/06B32B37/10B32B37/12
CPCB32B37/06B32B37/10B32B37/12
Inventor 姚力军潘杰惠宏业王学泽代宇光
Owner 上海江丰平芯电子科技有限公司