Semiconductor memory device

Abstract

Provided is a semiconductor memory device. The present technology relates to a semiconductor memory device. The semiconductor memory device includes a plurality of channel plugs disposed in a cell region of a semiconductor substrate, a first dummy region disposed at one end portion of the cell region and a second dummy region disposed at an other end portion of the cell region, and first dummy plugs disposed in the first dummy region and second dummy plugs disposed in the second dummy region. The number of the first dummy plugs is different than the number of the second dummy plugs.

Description

technical field [0001] The present disclosure relates to an electronic device, and more particularly, to a semiconductor memory device. Background technique [0002] Among semiconductor devices, semiconductor memory devices are mainly classified into volatile memory devices and nonvolatile memory devices. [0003] The writing and reading speeds of non-volatile memory devices are relatively slow. However, non-volatile memory devices are used to store data due to their ability to retain data when power is cut off. Non-volatile memory devices include read-only memory (ROM), mask ROM (MROM), programmable ROM (PROM), erasable programmable ROM (EPROM), electrically erasable programmable ROM (EEPROM), flash memory , Phase Change Random Access Memory (PRAM), Magnetic RAM (MRAM), Resistive RAM (RRAM), Ferroelectric RAM (FRAM), etc. Flash memory is classified into NOR type and NAND type. [0004] The flash memory has the advantages of RAM in which data can be freely programmed and...

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Problems solved by technology

[0003] Non-volatile memory devices have relatively slow write and read speeds

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