E2-type resonance driving circuit for MOSFET and modulation method of E2-type resonance driving circuit

Abstract

The invention discloses an E2-type resonance driving circuit for MOSFET. The circuit comprises a DC power supply voltage, the positive electrode of the DC power supply voltage is connected with one end of a DC inductor, the other end of the DC inductor is connected with the drain electrode of a first switching tube, and the source electrode of the first switching tube is connected with the negative electrode of the DC power supply voltage. The circuit also comprises a double-frequency resonance inductor and a resonance capacitor which are connected in series, thedouble-frequency resonance inductor and the resonance capacitor are connected in series and are then connected to the drain electrode and the source electrode of the first switch tube in parallel and are connected with an ON-OFF sub-circuit, and the DC power supply voltage is further connected with a negative-voltage turn-off sub-circuit in parallel. And the output end of the ON-OFF sub-circuit and the output end of the negative voltage turn-off sub-circuit are connected with a driven active switching tube in parallel. ON-OFF driving of the high-frequency MOSFET is realized, so that the switching device can work in an on-off mode of high-frequency resonance. The invention further discloses a modulation method of the E2-type resonance driving circuit for the MOSFET.

Description

technical field [0001] The invention belongs to the technical field of high-frequency switching power supply, and relates to an E 2 A similar resonant driving circuit, the present invention also relates to a modulation method for the above resonant driving circuit. Background technique [0002] Metal-oxide semiconductor field effect transistors (MOSFETs) mainly include gallium nitride field effect transistors (GaNMOSFETs), silicon carbide field effect transistors (SiC MOSFETs) and silicon field effect transistors (Si MOSFETs). With the development of power electronics technology, the operating frequency of power semiconductor devices is gradually increasing. In the fields of wireless power transmission, high-frequency switching power supply, etc., the operating frequency of MOSFET can reach tens of megahertz. Generally, MOSFET devices are voltage-driven devices, and the energy loss on the gate charge of the device during switching will cause a large gate drive loss, and th...

AI Technical Summary

Problems solved by technology

However, this type of scheme cannot realize ON-OFF modulation, and can only operate in a steady state; the start-up process of the drive circuit is slow, and there may be danger of false conduction of the switching device during the start-up process, and it is impossible to realize the control of the switching device. Negative pressure shutdown of

Images