VCSEL array chip packaging structure based on substrate heat dissipation

Abstract

The invention discloses a VCSEL array chip packaging structure based on substrate heat dissipation. The VCSEL array chip packaging structure comprises a top-emitting VCSEL array chip, a substrate layer, a solder layer and a heat sink which are sequentially arranged from top to bottom; wherein the substrate layer is etched into a sheet structure, the solder layer is provided with a water passing structure, and the heat sink is provided with a water passing groove, a water inlet and at least one water outlet; the sheet structure, the water passing structure and the water passing groove form a continuous water cooling channel, and the water cooling channel is provided with a water inlet end and at least one water outlet end; and the water inlet end of the water cooling channel is connected with the water inlet, and at least one water outlet end is correspondingly connected with at least one water outlet. The water flow heat dissipation system is used for replacing a traditional solid heatsink heat dissipation fin device and water cooling and solid heat sinks are combined, so that the defect that the heat dissipation effect becomes poor after the traditional solid heat sink heat dissipation fin device works for a period of time is overcome, and the heat dissipation problem of a top-emitting VCSEL array chip is effectively solved.

Description

technical field [0001] The invention relates to the technical field of semiconductor laser chip packaging, in particular to a VCSEL array chip packaging structure based on substrate heat dissipation. Background technique [0002] Compared with edge-emitting semiconductor lasers, vertical cavity surface-emitting lasers (VCSEL) have superior performance such as small size, circular spot, low threshold current, single longitudinal mode output, high coupling efficiency, and easy two-dimensional array integration. Power VCSELs are widely used in laser printing, laser medical treatment, chip lithography, welding processing and other fields. [0003] However, because the GaAs substrate absorbs light in the 800nm ​​band, the VCSEL laser in this range can only adopt the top emission method. The top-emitting VCSEL array is far away from the heat sink, and its heat dissipation capability is worse than that of the flip-chip bottom-emitting VCSEL. It is difficult to achieve a good heat ...

AI Technical Summary

Problems solved by technology

[0003] However, due to the absorption of GaAs substrate on the light in the 800nm ​​band, the VCSEL laser in this range can only adopt the top emission mode.

The top-emitting VCSEL array is far away from the heat sink, and the heat dissipation capability is worse than that of the flip-chip bottom-emitting VCSEL. It is difficult to achieve a good heat dissipation effect by using a conventional heat sink.

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