Laminated busbar structure layout of four-level nested neutral-point clamped h-bridge converter

Abstract

The invention discloses a laminated busbar structure layout of a four-level nested midpoint clamped H-bridge converter. The device includes a left half-bridge device, a right half-bridge device and a laminated busbar; the left half-bridge The arm device includes the first IGBT group, the second IGBT group, the third IGBT group, the left half-bridge clamp diode group Da, and the left support capacitor C d1 , upper left floating capacitance C fa1 and the lower left floating capacitor C fa2 , the IGBT group includes two independent IGBTs; the layout and connection of the left half-bridge device and the right half-bridge device are exactly the same. It can effectively shorten the length of the commutation path, improve the composite effect of the commutation circuit, reduce the stray inductance of the commutation circuit, greatly reduce the turn-off overvoltage of the power device, simplify the absorption circuit, and make the structure more efficient while reducing the cost. It is compact and the power density is further improved, which expands the safe working area of ​​the four-level converter, which is conducive to the long-term safe and stable operation of the four-level converter.

Description

technical field [0001] The invention belongs to the technical field of high-power electric energy conversion, and in particular relates to a laminated busbar structure layout of a four-level nested midpoint clamp H-bridge converter. Background technique [0002] With the advancement of power electronic device technology, information and control technology, power electronic converter technology has been greatly developed and improved. At present, medium and high-voltage, large-capacity power electronic converters are involved and applied more and more widely, such as wind power converters, high-voltage direct current transmission converters, heavy-duty locomotive traction converters, and mining electric drive converters. Converters, military mobile platform converters, etc., have become an important direction for the development of the industry. The power device of the traditional two-level converter has limited withstand voltage capability, and there are problems such as vo...

AI Technical Summary

Problems solved by technology

In addition, due to factors such as manufacturing and assembly errors, busbar itself and capacitance, it is inevitable that power devices will be stressed. If these factors are not taken into account in the design stage of power device layout and stacked busbars, it is likely to cause power devices bear excessive stress

In particular, the bus bars of the four-level nested neutral point clamp converter are usually larger, and the number of capacitors is more than that of the two-level, which increases this risk.

In addition, the commutation path of the inner tube of the four-level converter is relatively long, and there is usually a large voltage and current margin in practical applications, and the capacity of the power module cannot be fully utilized.

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