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Low-warpage polycrystalline silicon wafer

A polycrystalline silicon wafer, low warpage technology, applied in polycrystalline material growth, crystal growth, single crystal growth, etc., can solve the problem of high warpage

Inactive Publication Date: 2021-02-09
苏州澳京光伏科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] After the polysilicon prepared by the existing formula is fully produced into high-purity polysilicon products, due to its high warpage, the product will cause a series of troubles in specific applications

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] A low-warp polycrystalline silicon wafer, comprising the following components prepared by weight: 120-140 parts of high-purity quartz, 100-115 parts of coke, 70-90 parts of sulfuric acid; 50-65 parts of hydrogen chloride, 40-55 parts of hydrogen Parts, including specific preparation steps are as follows:

[0022] S1, select materials: select 120 parts of high-purity quartz, 100 parts of coke, 70 parts of sulfuric acid; 50 parts of hydrogen chloride, 40 parts of hydrogen;

[0023] S2. High-temperature reduction: Put the selected high-purity quartz and corresponding coke raw materials into the silicon submerged arc furnace, and through high-temperature heating, the high-purity quartz and coke undergo a reduction reaction to generate industrial silicon;

[0024] S3. Pickling: put the industrial silicon produced by reduction in the silicon submerged arc furnace into the reactor A, which is filled with sulfuric acid solution, and slowly mix and stir the raw materials in the ...

Embodiment 2

[0034] A low-warp polycrystalline silicon wafer, comprising the following components prepared by weight: 120-140 parts of high-purity quartz, 100-115 parts of coke, 70-90 parts of sulfuric acid; 50-65 parts of hydrogen chloride, 40-55 parts of hydrogen Parts, including specific preparation steps are as follows:

[0035] S1, select materials: select 130 parts of high-purity quartz, 110 parts of coke, 80 parts of sulfuric acid; 55 parts of hydrogen chloride, 50 parts of hydrogen;

[0036] S2. High-temperature reduction: Put the selected high-purity quartz and corresponding coke raw materials into the silicon submerged arc furnace, and through high-temperature heating, the high-purity quartz and coke undergo a reduction reaction to generate industrial silicon;

[0037] S3. Pickling: put the industrial silicon produced by reduction in the silicon submerged arc furnace into the reactor A, which is filled with sulfuric acid solution, and slowly mix and stir the raw materials in the ...

Embodiment 3

[0047] A low-warp polycrystalline silicon wafer, comprising the following components prepared by weight: 120-140 parts of high-purity quartz, 100-115 parts of coke, 70-90 parts of sulfuric acid; 50-65 parts of hydrogen chloride, 40-55 parts of hydrogen Parts, including specific preparation steps are as follows:

[0048] S1, select materials: select 140 parts of high-purity quartz, 115 parts of coke, 90 parts of sulfuric acid; 65 parts of hydrogen chloride, 55 parts of hydrogen;

[0049] S2. High-temperature reduction: Put the selected high-purity quartz and corresponding coke raw materials into the silicon submerged arc furnace, and through high-temperature heating, the high-purity quartz and coke undergo a reduction reaction to generate industrial silicon;

[0050] S3. Pickling: put the industrial silicon produced by reduction in the silicon submerged arc furnace into the reactor A, which is filled with sulfuric acid solution, and slowly mix and stir the raw materials in the re...

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PUM

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Abstract

The invention discloses a low-warpage polycrystalline silicon wafer which is prepared from the following components in parts by weight: 120-140 parts of high-purity quartz, 100-115 parts of coke, 70-90 parts of sulfuric acid, 50-65 parts of hydrogen chloride, and 40-55 parts of hydrogen. Compared with other treatment processes, the process is mature, the high-purity polycrystalline silicon is placed in a centrifugal polishing cylinder, the high-purity polycrystalline silicon is driven to rotate through rotation of the centrifugal polishing cylinder, polishing sand is arranged on the inner wallof the centrifugal polishing cylinder, the high-purity polycrystalline silicon is tightly attached to the inner wall of the cylinder to rotate, and then fine polishing is conducted on the high-puritypolycrystalline silicon; therefore, the warping degree of polycrystalline silicon is reduced, and the quality of polycrystalline products is improved.

Description

technical field [0001] The present invention relates to polycrystalline process production technology, more specifically, relates to a low warpage polycrystalline silicon wafer. Background technique [0002] Polysilicon is a form of elemental silicon. When molten elemental silicon is solidified under supercooled conditions, silicon atoms are arranged in the form of diamond lattices to form many crystal nuclei. If these crystal nuclei grow into crystal grains with different crystal plane orientations, these crystal grains combine to crystallize into polycrystalline silicon. . Its utilization value From the current development process of international solar cells, it can be seen that its development trend is monocrystalline silicon, polycrystalline silicon, ribbon silicon, thin film materials, etc. [0003] After the polysilicon prepared by the existing formula is fully produced into high-purity polysilicon products, due to its high warpage, the product will cause a series o...

Claims

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Application Information

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IPC IPC(8): C01B33/021C01B33/039C30B28/00C30B29/06
CPCC01B33/021C01B33/039C30B28/00C30B29/06
Inventor 杨世豪顾夏斌赖玮晟
Owner 苏州澳京光伏科技有限公司