High-frequency anti-reverse silicon stack and high-frequency boosting transformer

Abstract

The invention discloses a high-frequency anti-reverse silicon stack and a high-frequency boosting transformer. The high-frequency anti-reverse silicon stack comprises an insulating cover, and high-frequency diodes are stacked and installed in the insulating cover through combined supporting pieces. The combined supporting pieces are formed by connecting a plurality of layers of supporting pieces from top to bottom, and an inner fixing hole is formed in the center of each layer of supporting pieces and is used for fixing the inner side of each high-frequency diode; a plurality of outer fixing holes are formed in each layer of supporting pieces along the same radius and are used for fixing the outer side of each high-frequency diode; and a preformed hole is formed between every two adjacentlayers of supporting pieces so as to fix the last high-frequency diode of the upper layer and the first high-frequency diode of the lower layer. The high-frequency boosting transformer comprises a high-voltage output aviation plug, a transformer primary coil, a transformer secondary coil, a discharge loop, a high-frequency rectifying plate, a discharge resistor and the high-frequency anti-reversesilicon stack. The high-frequency anti-reverse silicon stack and the high-frequency boosting transformer are compact in structure and small in size, residual voltage can be discharged in time, and damage of the residual voltage to the human body is reduced.

Description

technical field [0001] The invention relates to the technical field of transformers, in particular to a high-frequency anti-anti-silicon stack and a high-frequency step-up transformer. Background technique [0002] At present, high-power high-voltage step-up transformers and high-frequency rectification circuits mostly use transformer secondary winding in segments, and then multi-stage cascading. Since ordinary silicon stacks are easily damaged, high-frequency rectification in the prior art uses high-voltage and high-frequency silicon stacks. Perform rectified output. Although this method can reduce the influence of the inter-turn distributed capacitance of the secondary winding on the high-frequency rectification circuit, the high-voltage and high-frequency rectifier silicon stack used as a rectifier device is relatively large and cannot meet the rectification of AC power above 200kHz. During the structural design process of high-power high-voltage step-up transformers and...

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Problems solved by technology

[0002] At present, high-power high-voltage step-up transformers and high-frequency rectification circuits mostly use transformer secondary winding in segments, and then multi-stage cascading. Since ordinary silicon stacks are easily damaged, high-frequency rectification in the prior art uses high-voltage and high-frequency silicon stacks. rectified output

Although this method can reduce the influence of the inter-turn distributed capacitance of the secondary winding on the high-frequency rectification circuit, the high-voltage and high-frequency rectifier silicon stack used as a rectifier device is relatively large and cannot meet the rectification of AC power above 200kHz. During the structural design process of high-power high-voltage step-up transformers and high-frequency rectifier circuits, the space utilization rate is poor, resulting in that the discharge devices in the prior art are generally placed outside the transformer, and there is no discharge circuit inside the transformer, and the high-voltage electric energy stored inside It is easy to cause harm to the human body, and the withstand voltage level is low

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