Manufacturing method of self-made back sealing structure of wafer
A manufacturing method and wafer technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as stress concentration and fragmentation, and achieve the goal of reducing stress concentration, reducing the probability of fragmentation, and reducing stress intensity Effect
Active Publication Date: 2021-02-19
HUA HONG SEMICON WUXI LTD
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Problems solved by technology
[0006] The technical problem to be solved by the present invention is to provide a method for manufacturing a self-made back-sealing structure of a wafer, which can solve the problem that the existing self-made back-sealing structure is prone to stress concentration and cause fragmentation
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[0022] The implementation of the present invention will be described below through specific specific embodiments in conjunction with the accompanying drawings, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. Specific details are set forth in the following description in order to fully understand the present invention, but the present invention can also be implemented or applied through other different specific embodiments, and the details in this specification can also be based on different viewpoints and applications. Various similar extensions and substitutions can be made by one without departing from the spirit of the invention.
[0023] The manufacturing method of wafer self-made back seal structure of the present invention, as image 3 shown, including the following steps:
[0024] Step S1, growing a first thin film layer on the back side of the wafer.
[0025] Th...
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The invention discloses a manufacturing method of a self-made back sealing structure of a wafer. The manufacturing method comprises the following steps of S1, growing a first thin film layer on the back surface of the wafer; S2, rotating the wafer by an angle, so that the contact position of the rotated wafer and the wafer boat does not coincide with the contact position of the wafer and the waferboat before rotation; and S3, growing a second thin film layer on the back surface of the wafer, wherein the first thin film layer and the second thin film layer form a back sealing structure. Starting from the perspective of reducing stress concentration, a one-step growth mode of a back sealing structure in the prior art is improved into a step-by-step growth mode, and the wafer is rotated after the first growth, so that the contact positions (namely the positions of wafer boat supporting legs on the wafer) of the wafer and the wafer boat in the two-time growth are different, the stress intensity borne by the supporting legs can be reduced, the probability of fragmentation is reduced, and the manufacturing cost of the chip is reduced.
Description
technical field [0001] The invention relates to the manufacturing technology of semiconductor integrated circuits, in particular to a method for manufacturing a self-made back-sealing structure of a wafer, so as to improve the defects of fragments caused by the self-made back-sealing structure. Background technique [0002] With the rapid development of the mobile Internet, people's demand for smart terminals is increasing, and image sensors, which are indispensable in smart terminals, have also ushered in unprecedented development space. Due to its high power consumption, the traditional CCD image sensor is limited in the market of high-performance digital cameras. CMOS image sensor (CMOS Image Sensor, referred to as CIS) not only has low power consumption and fast speed, but also is easy to be compatible with existing semiconductor processes and has low production cost, which makes CMOS image sensors occupy half of the image sensor market. [0003] In the manufacturing pr...
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IPC IPC(8): H01L21/02
CPCH01L21/02164H01L21/02238
Inventor 闫玉琴王柯程刘锁白旭东范晓王函
Owner HUA HONG SEMICON WUXI LTD