Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Wafer cutting method

A cutting method and wafer technology, applied in semiconductor/solid-state device testing/measurement, electrical components, circuits, etc., can solve the problems of low wafer throughput, burns of the UV film supporting the wafer, insufficient cutting time, etc. The effect of precise control of cutting volume

Pending Publication Date: 2021-02-19
HUA HONG SEMICON WUXI LTD
View PDF3 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The current laser ring cutting process adopts a fixed time method for ring cutting, which has the problem of insufficient or too long cutting time. If the cutting time is insufficient, the support ring will still be connected to the effective die area. During the ring removal process, it will cause Cracks, which can lead to cracks in severe cases; too long cutting time will lead to low WPH (wafer throughput per hour), and burn the UV film supporting the wafer, resulting in damage and defects on the appearance of the wafer

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Wafer cutting method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0015] The wafer cutting method described in the present invention is mainly aimed at ring cutting of the wafer. According to the principle of dicing, the thickness of the dicing part gradually becomes thinner during dicing, which causes the light transmittance of the wafer to change. like figure 1 As shown, the entire cutting system includes a cutting head to realize circular cutting of the wafer, and also includes a photosensitive module, a signal processing unit, a data processing unit, and a feedback signal circuit. When the dicing unit ring-cuts the wafer, a photosensitive module is arranged under the wafer. Specifically, after the wafer is adsorbed on the cutting table, the photosensitive module is installed directly below the area with a radius of 130-150mm of the wafer. The photosensitive module and the cutting head are placed opposite to each other on both sides of the wafer. The number of photosensitive modules is set to 1 ~10, can realize simultaneous monitoring o...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a wafer cutting method, which comprises the following steps that: when a cutting unit carries out ring cutting on a wafer, a light sensation module is arranged below the wafer,and the light sensation module and a cutting head are respectively arranged on two sides of the wafer; during cutting, the light sensation module can sense light sensation changes of light transmission of a cutting area in the cutting process in real time and transmit signals to the signal processing unit, the signal processing unit transmits light sensation signals to the data processing unit, the data processing unit controls the cutting head through the feedback signal loop, and the cutting amount is accurately controlled.

Description

technical field [0001] The invention relates to the field of semiconductor device manufacturing, in particular to a wafer cutting method. Background technique [0002] With the rapid development of IC technology, the requirements for chip integration, speed and reliability are getting higher and higher, which requires chips to be smaller and thinner. At the same time, in order to reduce the production cost of a single chip and better control product performance, more and more chip types have begun to use 12-inch silicon wafers for production. [0003] The typical process of 12-inch wafer backside thinning technology in the field of power devices is TAIKO grinding, backside wet etching, backside metallization, ring cutting and ring removal. When the TAIKO process grinds the wafer, it will keep the peripheral edge of the wafer (about 3mm), and only grind and thin the inside of the circle. The advantage of the TAIKO process is to reduce wafer warpage and improve wafer strengt...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/304H01L21/66
CPCH01L21/304H01L22/26
Inventor 苏亚青张守龙谭秀文肖酉
Owner HUA HONG SEMICON WUXI LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com